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24CS512T-E/MS66KVAO

Microchip Technology

24CS512T-E/MS66KVAO by Microchip Technology

Microchip Technology's 24CS512T-E/MS66KVAO is an EEPROM with 64KX8 organization, operating in synchronous mode at up to 1 MHz clock frequency. It features I2C control byte 1010DDDR and offers hardware write protection. Ideal for automotive applications due to AEC-Q100 screening level and small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,710 parts In-Stock

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Nova Conductors

Japan . 750 parts In-Stock

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750

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VNN

France . 88 parts In-Stock

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AZTECH Wire

Italy . 469 parts In-Stock

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$9.071

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469

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Ampacity Inc.

Singapore . 1,027 parts In-Stock

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$21.000

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Microchip USA

USA . 2,502 parts In-Stock

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Argo Parts USA

USA . 1,873 parts In-Stock

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Continental Prestige Electronics

USA . 1,800 parts In-Stock

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Marpe Global Electronics

Taiwan . 1,621 parts In-Stock

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QualityLine Systems

Poland . 1,621 parts In-Stock

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XL Components Corporation

Australia . 1,621 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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Overview

Unlock unparalleled performance and reliability with the 24CS512T-E/MS66KVAO EEPROM by industry leader Microchip Technology. Designed for a wide range of applications, this cutting-edge memory solution offers superior durability, security, and efficiency. Experience seamless operation and peace of mind with the highest quality components, advanced features, and innovative technology - all at an unbeatable value. Elevate your projects to new heights with Microchip Technology's 24CS512T-E/MS66KVAO EEPROM.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for various applications.

Surface Mount: YES

The surface mount feature allows for easy and efficient installation, saving time and effort during assembly.

Screening Level: AEC-Q100

AEC-Q100 screening level ensures high quality and reliability, making this product ideal for automotive and industrial use.

Package Shape: SQUARE

The square package shape offers a compact design, saving valuable space on the PCB.

Operating Mode: SYNCHRONOUS

The synchronous operating mode enables faster data transfer and improved performance, enhancing the overall efficiency of the product.

No. of Terminals: 8

With 8 terminals, this product offers sufficient connectivity options for a wide range of applications.

Package Style: SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline, thin profile, and shrink pitch package style ensures efficient heat dissipation and optimal space utilization.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this product can withstand harsh environmental conditions.

Organization: 64KX8

The 64KX8 organization provides ample storage capacity and efficient data organization.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C allows for reliable performance even in extreme cold conditions.

Technical Specifications

EEPROM 24CS512T-E/MS66KVAO attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

1 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

S-PDSO-G8

Length:

3 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.19

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000003 Amp

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

3 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

24CS512T-E/MS66KVAO Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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