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24AA64T-I/MSG

Microchip Technology

24AA64T-I/MSG by Microchip Technology

24AA64T-I/MSG by Microchip Technology is a serial EEPROM with an organization of 8KX8 and a memory density of 65536 bit. It operates in synchronous mode with a max clock frequency of 0.4 MHz. This EEPROM is commonly used in industrial applications due to its temperature grade and endurance of 1000000 Write/Erase Cycles.

Median Price

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Lifecycle Status

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3

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1k+

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France . 3,643 parts In-Stock

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Vyrian

USA . 146 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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AZTECH Wire

Italy . 427 parts In-Stock

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427

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Ampacity Inc.

Singapore . 967 parts In-Stock

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$22.000

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967

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RGB Technical Solutions

Ukraine . 2,967 parts In-Stock

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Bastille Electronics

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50

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Overview

Experience the unbeatable quality and reliability of Microchip Technology with the 24AA64T-I/MSG EEPROM. Designed to meet the highest industry standards, this compact and versatile memory device offers endless possibilities for your applications. With its small outline and thin profile package style, it is perfect for space-constrained designs. Its synchronous operating mode ensures seamless performance, while the hardware write protection feature keeps your data safe. The 24AA64T-I/MSG boasts an impressive endurance of 1,000,000 write/erase cycles, guaranteeing long-lasting functionality. Trust Microchip Technology for all your EEPROM needs and unlock the full potential of your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and protection for the EEPROM, making it a reliable choice for various applications.

Surface Mount: YES

The surface mount feature allows for easy installation and integration into electronic devices, making it convenient for compact designs.

No. of Functions: 1

With a single function, this EEPROM simplifies the implementation process and enhances overall system efficiency.

Package Shape: SQUARE

The square package shape optimizes space utilization, making it suitable for designs with limited board real estate.

Operating Mode: SYNCHRONOUS

The synchronous operating mode enables precise timing and synchronization, ensuring accurate data transfer and processing.

Nominal Supply Voltage (Vsup): 2.5V

The 2.5V nominal supply voltage offers compatibility with a wide range of systems, providing flexibility in power requirements.

Power Supplies (V): 2/5

This EEPROM can function with both 2V and 5V power supplies, offering versatility for different power configurations.

No. of Terminals: 8

With 8 terminals, this EEPROM enables simple connectivity and ease of circuit integration.

Package Style: SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline, thin profile, and shrink pitch package style ensures space-saving design possibilities, ideal for compact applications.

Maximum Operating Temperature: 85°C

The EEPROM's ability to operate at up to 85°C allows for usage in high-temperature environments, increasing its versatility.

Organization: 8KX8

The 8KX8 organization provides a memory capacity of 8 kilobytes, offering ample storage for data and code storage applications.

Minimum Operating Temperature: -40°C

The EEPROM's ability to operate in cold temperatures as low as -40°C makes it suitable for various industrial and outdoor applications.

Terminal Finish: Matte Tin (Sn)

The matte tin terminal finish enhances solderability and reliability, ensuring stable connections for seamless functionality.

I2C Control Byte: 1010DDDR

The I2C control byte simplifies communication and control protocols, enabling efficient data transfer between devices.

Terminal Position: DUAL

The dual terminal position allows for flexible PCB layout options, accommodating different mounting orientations.

Write Protection: HARDWARE

The hardware-based write protection feature ensures data integrity and security by preventing accidental or unauthorized modifications.

Maximum Seated Height: 1.1 mm

With a maximum seated height of 1.1 mm, this EEPROM offers a low-profile design option for space-constrained applications.

Maximum Clock Frequency (fCLK): 0.4 MHz

The EEPROM's maximum clock frequency of 0.4 MHz allows for quick data transfer and processing, enhancing overall system performance.

Width: 3 mm

With a width of 3 mm, this EEPROM provides compact dimensions, suitable for designs where size is a critical factor.

Minimum Supply Voltage (Vsup): 1.7V

The 1.7V minimum supply voltage enables compatibility with low-power systems, ensuring energy efficiency and extended battery life.

Maximum Time At Peak Reflow Temperature (s): 40

The EEPROM's maximum time at peak reflow temperature of 40 seconds simplifies the manufacturing process, reducing production time and cost.

Peak Reflow Temperature °C: 260

The EEPROM can withstand peak reflow temperatures of up to 260°C, ensuring robustness and reliability during assembly processes.

Length: 3 mm

With a length of 3 mm, this EEPROM offers a compact form factor, facilitating integration into various devices and systems.

Temperature Grade: INDUSTRIAL

Designed for industrial environments, this EEPROM can operate reliably in harsh conditions, making it suitable for demanding applications.

Technology: CMOS

The CMOS technology employed in this EEPROM ensures low power consumption, high noise immunity, and compatibility with a wide range of integrated circuits.

Parallel or Serial: SERIAL

With its serial interface, this EEPROM enables easy interfacing with microcontrollers and other serial devices, simplifying overall system design and control.

Terminal Form: GULL WING

The gull wing terminal form enhances mechanical stability and robustness during assembly, ensuring reliable connections.

Maximum Supply Current: 3 mA

The EEPROM's maximum supply current of 3 mA ensures low power consumption, contributing to energy-efficient operation.

No. of Words: 8192 words

With a substantial capacity of 8192 words, this EEPROM provides ample storage space for storing data or code.

Memory Width: 8

The 8-bit memory width allows for efficient data retrieval and processing, enhancing system performance.

Minimum Data Retention Time: 200

With a minimum data retention time of 200 years, this EEPROM ensures reliable data storage even over prolonged periods, making it suitable for critical applications.

Terminal Pitch: 0.65 mm

The terminal pitch of 0.65 mm provides compatibility with standardized PCB designs and allows for reliable soldering.

No. of Words Code: 8K

The EEPROM's code capacity of 8 kilowords allows for storing essential program instructions, enhancing functionality and versatility.

Moisture Sensitivity Level (MSL): 1

With an MSL level of 1, this EEPROM can withstand standard moisture exposure levels during manufacturing and ensures long-term reliability.

Maximum Supply Voltage (Vsup): 5.5V

The 5.5V maximum supply voltage offers compatibility with a wide range of systems, allowing for flexible power options.

Endurance: 1000000 Write/Erase Cycles

With an endurance of 1,000,000 write/erase cycles, this EEPROM provides reliable and durable data storage, suitable for frequent data updates.

Serial Bus Type: I2C

The I2C serial bus type facilitates easy integration and communication with other devices, enabling efficient data transfer and control protocols.

Maximum Write Cycle Time (tWC): 5 ms

The EEPROM's maximum write cycle time of 5 ms ensures fast data storage and updates, contributing to overall system efficiency.

Memory Density: 65536 bit

With a memory density of 65536 bits, this EEPROM offers extensive storage capacity, suitable for various data storage and retrieval applications.

Memory IC Type: EEPROM

Being an EEPROM, this memory IC type provides non-volatile storage capabilities, allowing for reliable and persistent data storage.

Maximum Standby Current: 0.000001 Amp

With a maximum standby current of 0.000001 Amp, this EEPROM ensures minimal power consumption during idle periods, contributing to energy efficiency.

Technical Specifications

EEPROM 24AA64T-I/MSG attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e3

Length:

3 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.19

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

3 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

24AA64T-I/MSG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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