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24AA02E64T-I/SN

Microchip Technology

24AA02E64T-I/SN by Microchip Technology

24AA02E64T-I/SN by Microchip Tech is a 2048-bit EEPROM with 256x8 organization, operating at 5V. It features I2C serial bus type, endurance of 1M cycles, and industrial temperature grade. Ideal for applications requiring reliable non-volatile memory storage in harsh environments.

Median Price

$0.345

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip Technology

USA . 36,300 parts In-Stock

1+ parts

$0.330

100+ parts

$0.290

1k+ parts

$0.270

10k+ parts

$0.260

36,300

$0.330

$0.290

$0.270

$0.260

Mouser Electronics

USA . 1,912 parts In-Stock

1+ parts

$0.360

100+ parts

-

1k+ parts

-

10k+ parts

-

1,912

$0.360

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

West Coast Incorporated

USA . 8,145 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,145

-

-

-

-

A-Z Elektronik GmbH

Germany . 2,971 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

2,971

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-

-

-

Overview

Unlock endless possibilities with the 24AA02E64T-I/SN EEPROM from Microchip Technology! Designed with top-notch quality and reliability, this versatile memory storage solution is perfect for a wide range of applications. With its durable construction and advanced features, this EEPROM offers unparalleled value and benefits to customers looking for dependable performance. Whether you're in the automotive, industrial, or consumer electronics industry, trust the 24AA02E64T-I/SN to deliver exceptional results every time. Elevate your projects with Microchip Technology's innovative EEPROM today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the EEPROM, making it suitable for various operating conditions.

Nominal Supply Voltage / Vsup (V): 5

Operating at a voltage of 5V ensures stable and reliable performance of the EEPROM.

No. of Terminals: 8

The 8 terminals allow for easy integration and connection of the EEPROM within a circuit.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and coordination of data transfer, enhancing the efficiency of the EEPROM.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this EEPROM can function reliably even in harsh environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the EEPROM energy-efficient and reliable.

Endurance: 1000000 Write/Erase Cycles

High endurance ensures a long lifespan for the EEPROM, making it a reliable choice for frequent read and write operations.

Serial Bus Type: I2C

I2C serial bus communication simplifies integration and facilitates communication with other devices, enhancing the versatility of the EEPROM.

Technical Specifications

EEPROM 24AA02E64T-I/SN attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Additional Features:

1.7V TO 2.5V @ 0.1MHz

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256X8

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.23

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/5

Programming Voltage (V):

5

Qualification:

Not Qualified

Screening Level:

TS 16949

Maximum Seated Height:

1.75 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

5 ms

Trade Compliance

24AA02E64T-I/SN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

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Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

Category top products 20

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