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1N5993CE3

Microchip Technology

1N5993CE3 by Microchip Technology

1N5993CE3 by Microchip Technology is a Zener diode with a nominal reference voltage of 5.1V and max operating temperature of 175°C. It has a max power dissipation of 0.48W and a max dynamic impedance of 50 ohm. This diode is commonly used in applications requiring voltage regulation and protection against overvoltage conditions.

Median Price

$4.050

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Microchip Technology

USA . 339 parts In-Stock

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$4.050

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Nova Conductors

Japan . 100 parts In-Stock

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$3.950

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NAC Semi

USA . 271 parts In-Stock

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$4.250

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$3.850

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$3.520

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Vyrian

USA . 8,312 parts In-Stock

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Ampacity Inc.

Singapore . 338 parts In-Stock

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$3.440

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AZTECH Wire

Italy . 803 parts In-Stock

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Component Stockers USA

USA . 2,180 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 20,468 parts In-Stock

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Microchip USA

USA . 7,870 parts In-Stock

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West Coast Incorporated

USA . 6,760 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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$3.871

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$3.753

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$3.674

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Infinite Electronics LLP (Excess)

. 410 parts In-Stock

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Overview

Discover the power of the 1N5993CE3 by Microchip Technology! As a leader in the industry, Microchip Technology guarantees exceptional quality and reliability. This Zener diode is perfect for a wide range of applications, offering unparalleled performance and stability. With its maximum voltage tolerance of 2% and working test current of 5 mA, this diode ensures precise and accurate results every time. Its compact design and easy-to-use terminal form make it ideal for both professionals and enthusiasts alike. Experience the value and benefits of the 1N5993CE3 and take your projects to the next level with Microchip Technology!

Feature Benefit Bullets

Package Body Material:

GLASS - The glass package body material provides excellent resistance to heat and moisture, making this Zener diode highly durable and reliable in various environments.

Config:

SINGLE - With a single configuration, this Zener diode simplifies circuit design and allows for easier integration into electronic systems.

Working Test Current:

5 mA - The 5 mA working test current ensures stable and consistent performance, enabling precise voltage regulation in applications where a low current is required.

Package Shape:

ROUND - The round package shape offers convenient mounting and placement options, allowing for flexible installation and space optimization on PCBs or in electronic devices.

No. of Terminals:

2 - Having just two terminals simplifies the electrical connections, enhancing ease of installation and reducing the chances of wiring errors.

Package Style (Meter):

LONG FORM - The long form package style enhances heat dissipation and thermal management, preventing excessive heat buildup and ensuring the diode operates within safe temperature limits.

Maximum Voltage Tolerance:

2% - The 2% maximum voltage tolerance guarantees precise voltage control, providing accuracy and stability in voltage regulation applications.

Maximum Operating Temperature:

175 °C - With a maximum operating temperature of 175°C, this Zener diode can withstand harsh operating conditions and maintain optimal performance even in high-temperature environments.

Maximum Dynamic Impedance:

50 ohm - The low maximum dynamic impedance facilitates efficient voltage regulation, enabling better control over voltage fluctuations and ensuring a stable output voltage.

Terminal Finish:

MATTE TIN - The matte tin terminal finish enhances solderability, enabling secure and reliable connections during assembly, and ensuring robust electrical contact.

Terminal Position:

AXIAL - The axial terminal position simplifies PCB layout and enables easy integration into circuits, allowing for compact and efficient designs.

Case Connection:

ISOLATED - The isolated case connection eliminates the risk of electrical short circuits, enhancing the safety and reliability of the diode in various applications.

Maximum Power Dissipation:

0.48 W - The maximum power dissipation of 0.48 W ensures efficient heat dissipation and allows the diode to handle higher power levels, making it suitable for demanding applications.

Diode Type:

ZENER DIODE - As a Zener diode, this product is specially designed for voltage regulation applications, offering excellent voltage stability and low dynamic resistance.

Nominal Reference Voltage:

5.1 V - The 5.1 V nominal reference voltage provides a consistent and reliable voltage reference, making this diode ideal for precision voltage regulation tasks.

Technology:

ZENER - Built using Zener technology, this diode provides a high level of accuracy and stability in voltage regulation, ensuring reliable performance in a wide range of applications.

Terminal Form:

WIRE - The wire terminal form allows for easy connection and accessibility, facilitating straightforward integration into circuits and simplifying maintenance.

No. of Elements:

1 - With a single element, this Zener diode offers a straightforward and compact solution for voltage regulation, reducing complexity and ensuring a reliable operation.

Polarity:

UNIDIRECTIONAL - The unidirectional nature of this diode ensures that current flows in one direction only, making it suitable for applications where voltage rectification is required.

Diode Element Material:

SILICON - Constructed using silicon, this diode element material provides better efficiency, superior temperature stability, and a longer operational lifespan compared to other materials.

Technical Specifications

Zener Diodes 1N5993CE3 attributes and parameters. Explore more Zener Diodes devices from Microchip Technology

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

50 ohm

JEDEC-95 Code:

DO-204AH

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.48 W

Qualification:

Not Qualified

Nominal Reference Voltage:

5.1 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

2 %

Working Test Current:

5 mA

Trade Compliance

1N5993CE3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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