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MCQ4438-TP

Micro Commercial Components

MCQ4438-TP by Micro Commercial Components

MCQ4438-TP by Micro Commercial Components is a N-channel FET with 60V DS breakdown voltage and 40A IDM. Ideal for power applications, it operates in enhancement mode with -55 to 150°C temperature range. Its small outline package and low on-resistance make it suitable for various electronic designs.

Median Price

$0.645

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 931 parts In-Stock

1+ parts

$0.640

100+ parts

$0.358

1k+ parts

$0.220

10k+ parts

$0.185

931

$0.640

$0.358

$0.220

$0.185

DigiKey

USA . 344 parts In-Stock

1+ parts

$0.650

100+ parts

$0.358

1k+ parts

$0.235

10k+ parts

$0.185

344

$0.650

$0.358

$0.235

$0.185

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

QUARKTWIN TECHNOLOGY LTD

USA . 20,927 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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20,927

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Overview

Looking for a reliable Power Field Effect Transistor? Look no further than the MCQ4438-TP by Micro Commercial Components! With its high-quality construction and N-channel configuration, this transistor offers superior performance and durability. Perfect for a variety of applications, this transistor is designed to enhance efficiency and power management in your electronic devices. Trust in Micro Commercial Components for top-notch products that deliver value and reliability to meet all your needs.

Feature Benefit Bullets

Package Body Material : PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring long-lasting performance.

Polarity or Channel Type : N-CHANNEL

N-channel FETs typically offer higher mobility and faster switching speeds compared to P-channel FETs, making them suitable for high-performance applications.

Configuration : SINGLE WITH BUILT-IN DIODE

The built-in diode allows for more efficient circuit design and can help prevent reverse current flow, enhancing overall system reliability.

Surface Mount : YES

Enables easy and convenient integration onto circuit boards, saving space and simplifying assembly processes.

Minimum DS Breakdown Voltage : 60 V

Provides a high level of voltage tolerance, making the FET suitable for a wide range of applications including power supply circuits.

Operating Mode : ENHANCEMENT MODE

Enhancement mode FETs offer better control over the switching operation and are commonly used in power management circuits.

Maximum Pulsed Drain Current (IDM) : 40 A

The high pulsed drain current capability allows for handling short-term peak loads without risking damage to the FET.

Maximum Power Dissipation (Abs) : 1.25 W

Efficient power dissipation helps prevent thermal issues and ensures stable operation under varying load conditions.

Maximum Operating Temperature : 150 °C

The high operating temperature range allows for reliable performance in harsh environmental conditions.

Maximum Drain Current (ID) : 8.2 A

The high drain current rating enables the FET to handle substantial power loads without experiencing performance degradation.

Maximum Drain-Source On Resistance : 0.036 ohm

Low on-resistance helps minimize power losses and improve efficiency in power switching applications.

Maximum Feedback Capacitance (Crss) : 116 pF

Low feedback capacitance supports high-frequency operation and efficient switching characteristics in the FET.

Technical Specifications

Power Field Effect Transistors (FET) MCQ4438-TP attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Micro Commercial Components

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

8.2 A

Maximum Drain-Source On Resistance:

.036 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

116 pF

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

40 A

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Element Material:

SILICON

Trade Compliance

MCQ4438-TP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Micro Commercial Components

MCC offers a broad range of solutions with ready to go design solutions in various segments such as Automotive, Industrial, Computing & Personal Electronics and Consumer.

Category top products 20

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