Loading...

LBSS139DW1T3G

Leshan Radio

LBSS139DW1T3G by Leshan Radio

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .2 A; No. of Terminals: 6; Terminal Position: DUAL;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Small Signal Field Effect Transistors (FET) LBSS139DW1T3G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Leshan Radio

Specs

Minimum DS Breakdown Voltage:

50 V

Maximum Drain Current (ID):

.2 A

Maximum Drain-Source On Resistance:

3.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

LBSS139DW1T3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Leshan Radio

Leshan Radio Company, Ltd.(LRC) is a well-known electronic company located in Sichuan province, the center area of China western development. Head office and initial factories are in Leshan, a famous historic and cultural city. New factories and R&D centers are in Chengdu, capital city of Sichuan Province. Since its establishment in 1971, LRC has dedicated half a century to the R&D and manufacturing of semiconductor devices and has grown into a group company with several subsidiary and JV companies

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.