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L2N7002KWT1G

Leshan Radio

L2N7002KWT1G by Leshan Radio

Leshan Radio's L2N7002KWT1G is a N-CHANNEL FET with 60V DS breakdown voltage, 0.32A ID, and 2.3Ω RDS(ON). Ideal for small signal applications in electronics due to its compact SMALL OUTLINE package and ENHANCEMENT MODE operation.

Median Price

$0.517

Lifecycle Status

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4

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1k+

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Adafruit Industries

USA . 350 parts In-Stock

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$0.517

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$0.491

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Avnet

USA . 39,000 parts In-Stock

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Vyrian

USA . 177 parts In-Stock

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Nova Conductors

Japan . 69 parts In-Stock

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Decca Corp

Germany . 216 parts In-Stock

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$0.439

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$0.430

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$0.426

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$0.517

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$0.491

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Aztec Data Supply Inc.

USA . 88 parts In-Stock

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$0.637

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AZTECH Wire

Italy . 261 parts In-Stock

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$7.280

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iodParts Technologies Inc.

India . 18,620 parts In-Stock

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Argo Parts USA

USA . 3,588 parts In-Stock

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Continental Prestige Electronics

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Assy Fe

Spain . 1,000 parts In-Stock

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Bastille Electronics

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Overview

Enhance your electronic designs with the L2N7002KWT1G by Leshan Radio, a high-quality N-CHANNEL Small Signal Field Effect Transistor. With its reliable performance and built-in diode, this transistor is perfect for a wide range of applications. From power management to signal amplification, this transistor offers value and versatility. Trust Leshan Radio's expertise in semiconductor technology and choose the L2N7002KWT1G for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable packaging material that protects the transistor from external elements and ensures long-term functionality.

Polarity or Channel Type: N-CHANNEL

Allows for efficient flow of electrons, making this transistor suitable for a wide range of applications.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this transistor can handle higher voltages without malfunctioning, ensuring reliability.

Configuration: SINGLE WITH BUILT-IN DIODE

Integrated diode simplifies circuit design and saves space on the PCB.

Maximum Drain Current (ID): 0.32 A

Capable of handling relatively high current, making it suitable for applications requiring moderate power.

Maximum Drain-Source On Resistance: 2.3 ohm

Low on-resistance minimizes power loss and heat generation, improving efficiency.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer improved control over the flow of current, enhancing performance.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers better performance characteristics compared to other FET technologies, making it a reliable choice.

Technical Specifications

Small Signal Field Effect Transistors (FET) L2N7002KWT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Leshan Radio

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.32 A

Maximum Drain-Source On Resistance:

2.3 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

L2N7002KWT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Leshan Radio

Leshan Radio Company, Ltd.(LRC) is a well-known electronic company located in Sichuan province, the center area of China western development. Head office and initial factories are in Leshan, a famous historic and cultural city. New factories and R&D centers are in Chengdu, capital city of Sichuan Province. Since its establishment in 1971, LRC has dedicated half a century to the R&D and manufacturing of semiconductor devices and has grown into a group company with several subsidiary and JV companies

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