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TC58NVG0S3EBAI4JRH

Kioxia Holdings

TC58NVG0S3EBAI4JRH by Kioxia Holdings

Kioxia Holdings' TC58NVG0S3EBAI4JRH is a 128MX8 EEPROM with CMOS technology. It operates at 3.3V, has 134M words, and supports parallel programming. Ideal for industrial applications requiring high memory density in a compact GRID ARRAY package with very thin profile and fine pitch design.

Median Price

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Nova Conductors

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Corohmni

South Africa . 219 parts In-Stock

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Aztec Data Supply Inc.

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AZTECH Wire

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Continental Prestige Electronics

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Argo Parts USA

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Overview

Unlock a world of possibilities with the TC58NVG0S3EBAI4JRH by Kioxia Holdings! This top-of-the-line EEPROM boasts unparalleled quality and reliability, thanks to its manufacturer's reputation for excellence. Perfect for a wide range of applications, this versatile memory device offers customers unmatched value and benefits. Experience seamless performance and enhanced functionality with the TC58NVG0S3EBAI4JRH - your go-to solution for all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight casing for the EEPROM, making it suitable for various applications.

Surface Mount: YES

Enables easy installation on printed circuit boards, saving space and simplifying assembly processes.

Nominal Supply Voltage / Vsup (V): 3.3

Operates efficiently at a standard voltage level, ensuring compatibility with typical power sources.

Operating Mode: ASYNCHRONOUS

Allows for independent operations without the need for synchronization, enhancing flexibility in use.

Memory Density: 1073741824 bit

Offers a high memory density, allowing for storage of a large amount of data in a compact form.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high performance, making it energy efficient.

Technical Specifications

EEPROM TC58NVG0S3EBAI4JRH attributes and parameters. Explore more EEPROM devices from Kioxia Holdings

Specs

JESD-30 Code:

R-PBGA-B63

Length:

11 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

63

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

9 mm

Trade Compliance

TC58NVG0S3EBAI4JRH Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Kioxia Holdings

KIOXIA Group is one of the largest manufacturers of NAND flash memory. In 1987, KIOXIA invented the world’s first NAND flash memory not to require a power source (non-volatile memory). This technology is now being used in various fields ranging from digital devices such as smartphones to data centers and has become an indispensable core component of the information society. As IoT, AI and 5G technologies become more widespread, we will see an explosive increase in the volume of data generated around the world. Large-capacity, high-performance memory and devices, and high-speed data processing systems will be indispensable for the storage and use of that data. As a global leader in flash memory and SSDs, we will continue to deliver products and services that create new value for society.

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