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IXTY08N100P

IXYS Corporation

IXTY08N100P by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Terminal Finish: MATTE TIN; No. of Elements: 1;

Median Price

$4.490

Lifecycle Status

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8

In-Stock Inventory

1k+

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Arrow

USA . 61 parts In-Stock

1+ parts

$1.237

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61

$1.237

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DigiKey

USA . 350 parts In-Stock

1+ parts

$4.490

100+ parts

$2.201

1k+ parts

$1.707

10k+ parts

$1.582

350

$4.490

$2.201

$1.707

$1.582

Mouser Electronics

USA . 1,391 parts In-Stock

1+ parts

$4.580

100+ parts

$2.300

1k+ parts

$2.040

10k+ parts

$1.580

1,391

$4.580

$2.300

$2.040

$1.580

Distributors (In-Stock)

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Ozdisan Elektronik

Türkiye . 2,718 parts In-Stock

1+ parts

$1.797

100+ parts

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2,718

$1.797

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ACDS - Activité Composants Distribution Service

France . 2,450 parts In-Stock

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2,450

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NAC Semi

USA . 1,825 parts In-Stock

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$3.160

10k+ parts

$2.880

1,825

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$3.160

$2.880

LIBRA Elektronik GmbH

Germany . 440 parts In-Stock

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440

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Nova Conductors

Japan . 200 parts In-Stock

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200

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Ampacity Inc.

Singapore . 863 parts In-Stock

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$1.050

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863

$1.050

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Component Stockers USA

USA . 7,470 parts In-Stock

1+ parts

$1.830

100+ parts

$1.500

1k+ parts

$1.670

10k+ parts

-

7,470

$1.830

$1.500

$1.670

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Microchip USA

USA . 9,724 parts In-Stock

1+ parts

$22.880

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9,724

$22.880

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Perfect Parts

USA . 53,163 parts In-Stock

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53,163

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Authorized Procurement Solutions

USA . 2,728 parts In-Stock

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2,728

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GreenTree Electronics

Israel . 2,718 parts In-Stock

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2,718

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Aranea Global

USA . 100 parts In-Stock

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100

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Technical Specifications

Power Field Effect Transistors (FET) IXTY08N100P attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

80 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

1000 V

Maximum Drain Current (Abs) (ID):

.8 A

Maximum Drain Current (ID):

.8 A

Maximum Drain-Source On Resistance:

20 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

1.8 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXTY08N100P Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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