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IXTT12N150

IXYS Corporation

IXTT12N150 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 890 W; Maximum Drain-Source On Resistance: 2 ohm; Transistor Element Material: SILICON;

Median Price

$13.856

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 200 parts In-Stock

1+ parts

$9.110

100+ parts

$9.110

1k+ parts

$9.110

10k+ parts

-

200

$9.110

$9.110

$9.110

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Arrow

USA . 30 parts In-Stock

1+ parts

$13.856

100+ parts

$10.712

1k+ parts

$10.694

10k+ parts

-

30

$13.856

$10.712

$10.694

-

Mouser Electronics

USA . 250 parts In-Stock

1+ parts

$19.840

100+ parts

-

1k+ parts

$12.910

10k+ parts

-

250

$19.840

-

$12.910

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DigiKey

USA . 620 parts In-Stock

1+ parts

$21.150

100+ parts

$13.275

1k+ parts

$11.129

10k+ parts

-

620

$21.150

$13.275

$11.129

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TTI

USA . 300 parts In-Stock

1+ parts

-

100+ parts

$12.720

1k+ parts

$11.320

10k+ parts

-

300

-

$12.720

$11.320

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 57 parts In-Stock

1+ parts

$8.960

100+ parts

-

1k+ parts

-

10k+ parts

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57

$8.960

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-

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Continental Prestige Electronics

USA . 30 parts In-Stock

1+ parts

$14.570

100+ parts

$11.310

1k+ parts

-

10k+ parts

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30

$14.570

$11.310

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-

Microchip USA

USA . 8,301 parts In-Stock

1+ parts

$47.796

100+ parts

-

1k+ parts

-

10k+ parts

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8,301

$47.796

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iodParts Technologies Inc.

India . 7,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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7,000

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Perfect Parts

USA . 168 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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168

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Technical Specifications

Power Field Effect Transistors (FET) IXTT12N150 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

750 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

1500 V

Maximum Drain Current (Abs) (ID):

12 A

Maximum Drain Current (ID):

12 A

Maximum Drain-Source On Resistance:

2 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-268AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

40 A

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXTT12N150 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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