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IXTQ36N30P

IXYS Corporation

IXTQ36N30P by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: AVALANCHE RATED; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;

Median Price

$4.810

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 328 parts In-Stock

1+ parts

$4.810

100+ parts

-

1k+ parts

$2.440

10k+ parts

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328

$4.810

-

$2.440

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DigiKey

USA . 49 parts In-Stock

1+ parts

$4.810

100+ parts

$3.213

1k+ parts

$2.384

10k+ parts

$2.307

49

$4.810

$3.213

$2.384

$2.307

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ozdisan Elektronik

Türkiye . 300 parts In-Stock

1+ parts

$4.305

100+ parts

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300

$4.305

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-

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NAC Semi

USA . 200 parts In-Stock

1+ parts

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100+ parts

$7.310

1k+ parts

$6.750

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200

-

$7.310

$6.750

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Prism Electronics

USA . 1 parts In-Stock

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1

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Distributors (Availability)

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Andel Nordic

Denmark . 301 parts In-Stock

1+ parts

$2.189

100+ parts

-

1k+ parts

$2.102

10k+ parts

$2.102

301

$2.189

-

$2.102

$2.102

Component Stockers USA

USA . 675 parts In-Stock

1+ parts

$4.440

100+ parts

$3.580

1k+ parts

-

10k+ parts

-

675

$4.440

$3.580

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Microchip USA

USA . 3,239 parts In-Stock

1+ parts

$15.540

100+ parts

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3,239

$15.540

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Glotronic Ltd.

UK . 1,965 parts In-Stock

1+ parts

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1,965

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Kepictronics

USA . 1,000 parts In-Stock

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1,000

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Perfect Parts

USA . 440 parts In-Stock

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440

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Authorized Procurement Solutions

USA . 55 parts In-Stock

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55

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GreenTree Electronics

Israel . 51 parts In-Stock

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51

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Technical Specifications

Power Field Effect Transistors (FET) IXTQ36N30P attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

1000 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

300 V

Maximum Drain Current (ID):

36 A

Maximum Drain-Source On Resistance:

.11 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

90 A

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXTQ36N30P Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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