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IXTP1N120P

IXYS Corporation

IXTP1N120P by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 63 W; Operating Mode: ENHANCEMENT MODE; JESD-609 Code: e3;

Median Price

$6.950

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,111 parts In-Stock

1+ parts

$6.950

100+ parts

$3.730

1k+ parts

$3.000

10k+ parts

$2.980

1,111

$6.950

$3.730

$3.000

$2.980

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ozdisan Elektronik

Türkiye . 100 parts In-Stock

1+ parts

$3.856

100+ parts

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100

$3.856

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NAC Semi

USA . 300 parts In-Stock

1+ parts

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100+ parts

$9.810

1k+ parts

$8.910

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300

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$9.810

$8.910

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Semtec, LLC

USA . 19 parts In-Stock

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19

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ACDS - Activité Composants Distribution Service

France . 19 parts In-Stock

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19

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Distributors (Availability)

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Andel Nordic

Denmark . 349 parts In-Stock

1+ parts

$7.446

100+ parts

-

1k+ parts

$7.148

10k+ parts

$7.148

349

$7.446

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$7.148

$7.148

Microchip USA

USA . 3,533 parts In-Stock

1+ parts

$22.559

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3,533

$22.559

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Alle Elektronik GmbH

Germany . 5,051 parts In-Stock

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5,051

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Perfect Parts

USA . 278 parts In-Stock

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Authorized Procurement Solutions

USA . 100 parts In-Stock

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100

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GreenTree Electronics

Israel . 100 parts In-Stock

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100

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Technical Specifications

Power Field Effect Transistors (FET) IXTP1N120P attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

100 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

1200 V

Maximum Drain Current (Abs) (ID):

1 A

Maximum Drain Current (ID):

1 A

Maximum Drain-Source On Resistance:

20 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

1.8 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXTP1N120P Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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