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IXTP05N100

IXYS Corporation

IXTP05N100 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;

Median Price

$4.660

Lifecycle Status

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8

In-Stock Inventory

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DigiKey

USA . 593 parts In-Stock

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$4.660

100+ parts

$2.171

1k+ parts

$1.786

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593

$4.660

$2.171

$1.786

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Mouser Electronics

USA . 549 parts In-Stock

1+ parts

$4.660

100+ parts

$2.130

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$1.780

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549

$4.660

$2.130

$1.780

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Nova Conductors

Japan . 21 parts In-Stock

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$1.620

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$1.620

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Ozdisan Elektronik

Türkiye . 100 parts In-Stock

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$2.502

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$2.502

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Vyrian

USA . 593 parts In-Stock

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593

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NAC Semi

USA . 300 parts In-Stock

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$6.350

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$5.770

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Sunrise Surplus Inc.

USA . 30 parts In-Stock

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Huijzer Components

Netherlands . 10 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$1.620

100+ parts

$1.588

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2,000

$1.620

$1.588

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AZTECH Wire

Italy . 593 parts In-Stock

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$7.300

100+ parts

$7.010

1k+ parts

$6.870

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$6.730

593

$7.300

$7.010

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$6.730

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Microchip USA

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Perfect Parts

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Authorized Procurement Solutions

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GreenTree Electronics

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Technical Specifications

Power Field Effect Transistors (FET) IXTP05N100 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

100 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

1000 V

Maximum Drain Current (Abs) (ID):

.75 A

Maximum Drain Current (ID):

.75 A

Maximum Drain-Source On Resistance:

17 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

3 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXTP05N100 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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