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IXTH110N25T

IXYS Corporation

IXTH110N25T by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 694 W; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): 260;

Median Price

$6.875

Lifecycle Status

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21

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1k+

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Newark

USA . 200 parts In-Stock

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$4.540

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$4.540

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$4.540

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$4.540

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$4.540

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$4.540

Mouser Electronics

USA . 587 parts In-Stock

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$6.800

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Arrow

USA . 210 parts In-Stock

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$6.875

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$5.960

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210

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Verical

USA . 210 parts In-Stock

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$6.875

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$5.960

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Farnell

UK . 300 parts In-Stock

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$8.910

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$5.300

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$4.200

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$8.910

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$4.200

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DigiKey

USA . 562 parts In-Stock

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$12.880

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$7.129

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$5.864

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$12.880

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Element14

Singapore . 200 parts In-Stock

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$14.530

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$7.660

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$7.510

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$14.530

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Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 12 parts In-Stock

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$8.110

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$8.110

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Bristol Electronics

USA . 500 parts In-Stock

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$8.755

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$4.115

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$3.765

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$8.755

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$3.765

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Ozdisan Elektronik

Türkiye . 106 parts In-Stock

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$8.804

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TME

Poland . 9 parts In-Stock

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$11.640

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$6.810

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$6.120

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$6.120

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ACDS - Activité Composants Distribution Service

France . 500 parts In-Stock

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Dan-Mar Components

USA . 500 parts In-Stock

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Chip Stock

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IBS Electronics

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$11.238

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$11.210

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NAC Semi

USA . 106 parts In-Stock

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$22.300

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$20.270

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Nova Conductors

Japan . 100 parts In-Stock

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Sunrise Surplus Inc.

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Inventory MP

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North Shore Components

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Prism Electronics

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Ampacity Inc.

Singapore . 156 parts In-Stock

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$8.340

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Continental Prestige Electronics

USA . 30 parts In-Stock

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$8.700

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$6.510

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$4.940

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Microchip USA

USA . 6,795 parts In-Stock

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$28.532

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Perfect Parts

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Aranea Global

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Authorized Procurement Solutions

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GreenTree Electronics

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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Technical Specifications

Power Field Effect Transistors (FET) IXTH110N25T attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

1000 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

250 V

Maximum Drain Current (Abs) (ID):

110 A

Maximum Drain Current (ID):

110 A

Maximum Drain-Source On Resistance:

.024 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

300 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXTH110N25T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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