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IXFT15N100Q3

IXYS Corporation

IXFT15N100Q3 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 690 W; Moisture Sensitivity Level (MSL): 1; Minimum DS Breakdown Voltage: 1000 V;

Median Price

$20.600

Lifecycle Status

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7

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DigiKey

USA . 144 parts In-Stock

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$19.820

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$12.442

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$11.167

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144

$19.820

$12.442

$11.167

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Mouser Electronics

USA . 16 parts In-Stock

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$21.380

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$13.130

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16

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Distrelec

Netherlands . 20 parts In-Stock

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Nova Conductors

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Bristol Electronics

USA . 46 parts In-Stock

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$15.600

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$14.999

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46

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$14.999

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Vyrian

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Dan-Mar Components

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Aztec Data Supply Inc.

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$0.497

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Corohmni

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AZTECH Wire

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Continental Prestige Electronics

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Netroflash

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Ampacity Inc.

Singapore . 128 parts In-Stock

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Semicontronic

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Component Stockers USA

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QUARKTWIN TECHNOLOGY LTD

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iodParts Technologies Inc.

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Microchip USA

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Argo Parts USA

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Perfect Parts

USA . 38 parts In-Stock

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Technical Specifications

Power Field Effect Transistors (FET) IXFT15N100Q3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

1000 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

1000 V

Maximum Drain Current (Abs) (ID):

15 A

Maximum Drain Current (ID):

15 A

Maximum Drain-Source On Resistance:

1.05 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-268AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

45 A

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXFT15N100Q3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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