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IXFN170N30P

IXYS Corporation

IXFN170N30P by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 890 W; Transistor Application: SWITCHING; Maximum Pulsed Drain Current (IDM): 500 A;

Median Price

$46.240

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

< 1k

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2 parts In-Stock

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$46.240

100+ parts

$32.384

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2

$46.240

$32.384

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Verical

USA . 100 parts In-Stock

1+ parts

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100

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Ozdisan Elektronik

Türkiye . 100 parts In-Stock

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$64.620

100+ parts

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100

$64.620

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NAC Semi

USA . 300 parts In-Stock

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$93.880

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$87.620

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300

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$93.880

$87.620

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Andel Nordic

Denmark . 161 parts In-Stock

1+ parts

$2.758

100+ parts

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$2.648

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$2.648

161

$2.758

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$2.648

$2.648

Ampacity Inc.

Singapore . 53 parts In-Stock

1+ parts

$35.520

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53

$35.520

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Component Stockers USA

USA . 743 parts In-Stock

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$45.140

100+ parts

$35.300

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743

$45.140

$35.300

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Microchip USA

USA . 3,800 parts In-Stock

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$113.068

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3,800

$113.068

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Authorized Procurement Solutions

USA . 100 parts In-Stock

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GreenTree Electronics

Israel . 100 parts In-Stock

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100

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Aranea Global

USA . 50 parts In-Stock

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Perfect Parts

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Technical Specifications

Power Field Effect Transistors (FET) IXFN170N30P attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

5000 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

300 V

Maximum Drain Current (Abs) (ID):

138 A

Maximum Drain Current (ID):

138 A

Maximum Drain-Source On Resistance:

.018 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-XUFM-X4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

500 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

NICKEL

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXFN170N30P Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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