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IXFK120N30T

IXYS Corporation

IXFK120N30T by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 960 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JEDEC-95 Code: TO-264AA;

Median Price

$15.902

Lifecycle Status

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3

In-Stock Inventory

< 1k

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TME

Poland . 1 parts In-Stock

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$4.740

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$4.740

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Ozdisan Elektronik

Türkiye . 25 parts In-Stock

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$15.902

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25

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NAC Semi

USA . 20 parts In-Stock

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$25.310

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20

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$25.310

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Distributors (Availability)

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Andel Nordic

Denmark . 50 parts In-Stock

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$3.858

100+ parts

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$3.703

10k+ parts

$3.703

50

$3.858

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$3.703

$3.703

Component Stockers USA

USA . 34 parts In-Stock

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$14.970

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34

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Microchip USA

USA . 9,624 parts In-Stock

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9,624

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Perfect Parts

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138

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Authorized Procurement Solutions

USA . 25 parts In-Stock

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25

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Technical Specifications

Power Field Effect Transistors (FET) IXFK120N30T attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

2500 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

300 V

Maximum Drain Current (Abs) (ID):

120 A

Maximum Drain Current (ID):

120 A

Maximum Drain-Source On Resistance:

.024 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

330 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXFK120N30T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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