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IXFH12N100

IXYS Corporation

IXFH12N100 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Terminal Finish: MATTE TIN; JEDEC-95 Code: TO-247AD;

Median Price

$14.700

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$10.937

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300

$10.937

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Forefront Electronics and Design

USA . 14 parts In-Stock

1+ parts

$14.700

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14

$14.700

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Voyager Components

USA . 12 parts In-Stock

1+ parts

$29.800

100+ parts

$29.800

1k+ parts

$29.800

10k+ parts

$29.800

12

$29.800

$29.800

$29.800

$29.800

Vyrian

USA . 343 parts In-Stock

1+ parts

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343

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Chip Stock

USA . 132 parts In-Stock

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Prism Electronics

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MISTER SPROCKETS

USA . 9 parts In-Stock

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LWI Electronics Inc

India . 8 parts In-Stock

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ComSIT Distribution GmbH

Germany . 5 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 1,000 parts In-Stock

1+ parts

$6.591

100+ parts

-

1k+ parts

$6.327

10k+ parts

$6.327

1,000

$6.591

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$6.327

$6.327

AZTECH Wire

Italy . 343 parts In-Stock

1+ parts

$16.421

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343

$16.421

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Component Stockers USA

USA . 4,865 parts In-Stock

1+ parts

$17.150

100+ parts

$16.290

1k+ parts

$15.770

10k+ parts

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4,865

$17.150

$16.290

$15.770

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Ampacity Inc.

Singapore . 448 parts In-Stock

1+ parts

$32.050

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448

$32.050

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Perfect Parts

USA . 1,052 parts In-Stock

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1,052

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Technical Specifications

Power Field Effect Transistors (FET) IXFH12N100 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

1000 V

Maximum Drain Current (Abs) (ID):

12 A

Maximum Drain Current (ID):

12 A

Maximum Drain-Source On Resistance:

1.05 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

300 W

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

48 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXFH12N100 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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