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IXFA130N10T

IXYS Corporation

IXFA130N10T by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 360 W; Maximum Drain Current (Abs) (ID): 130 A; Package Shape: RECTANGULAR;

Median Price

$4.228

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ozdisan Elektronik

Türkiye . 50 parts In-Stock

1+ parts

$4.228

100+ parts

-

1k+ parts

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10k+ parts

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50

$4.228

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 387 parts In-Stock

1+ parts

$8.447

100+ parts

-

1k+ parts

$8.109

10k+ parts

$8.109

387

$8.447

-

$8.109

$8.109

Microchip USA

USA . 9,754 parts In-Stock

1+ parts

$27.436

100+ parts

-

1k+ parts

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10k+ parts

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9,754

$27.436

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Authorized Procurement Solutions

USA . 12,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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12,000

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-

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Perfect Parts

USA . 101 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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101

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Technical Specifications

Power Field Effect Transistors (FET) IXFA130N10T attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Avalanche Energy Rating (EAS):

750 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

130 A

Maximum Drain Current (ID):

130 A

Maximum Drain-Source On Resistance:

.0091 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

95 pF

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

350 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXFA130N10T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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