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JANTX2N6851

Intersil

JANTX2N6851 by Intersil

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 4 A;

Median Price

$14.486

Lifecycle Status

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15

In-Stock Inventory

1k+

JANTX2N6851 by Intersil
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Freelance Electronics

USA . 67 parts In-Stock

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$10.892

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$11.437

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$10.783

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NAC Semi

USA . 6 parts In-Stock

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Vyrian

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Digiode

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Mil-Aero Solutions, Inc.

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Cyclops Electronics Ltd

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Resion

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Inventory MP

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Bristol Electronics

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Elcom Components

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Odi Ramu Company

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Semi Source

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Manoshevitz Elec. Sales

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Modulus Dynamics

Lithuania . 17,517 parts In-Stock

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$1.070

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$1.027

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$0.984

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Component Stockers USA

USA . 117 parts In-Stock

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$276.770

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Authorized Procurement Solutions

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Supply Digital

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RC Electronics

USA . 2,387 parts In-Stock

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$17.200

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$15.890

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Glotronic Ltd.

UK . 1,965 parts In-Stock

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Corphita

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Technical Specifications

Power Field Effect Transistors (FET) JANTX2N6851 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Intersil

Specs

Additional Features:

RADIATION HARDENED

Avalanche Energy Rating (EAS):

500 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

200 V

Maximum Drain Current (Abs) (ID):

4 A

Maximum Drain Current (ID):

4 A

Maximum Drain-Source On Resistance:

.8 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-205AF

JESD-30 Code:

O-MBCY-W3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

20 A

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

JANTX2N6851 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-329-1327, 5961013291327, 5961-01-351-6074, 5961013516074, 5961-01-534-9738, 5961015349738

NIIN

013291327, 013516074, 015349738

Manufacturer Highlights

Intersil

Japanese semiconductor company Renesas acquired Intersil on February 24, 2017. Intersil Corporation (NASDAQ:ISIL), a wholly owned subsidiary of Renesas Electronics Corporation, is a leading provider of innovative power management and precision analog solutions. The company's products form the building blocks of increasingly intelligent, mobile and power hungry electronics enabling advances in power management to improve efficiency and extend battery life. With a deep portfolio of intellectual property and a rich history of design and process innovation, Intersil is the trusted partner to leading companies in some of the world's largest markets, including the industrial and infrastructure, mobile computing, automotive and aerospace.

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