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IRLHS6276TR2PBF

International Rectifier

IRLHS6276TR2PBF by International Rectifier

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6.6 W; Case Connection: DRAIN; Operating Mode: ENHANCEMENT MODE;

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2

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1k+

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Vyrian

USA . 967 parts In-Stock

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Digiode

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Modulus Dynamics

Lithuania . 1,360 parts In-Stock

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$0.532

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$0.511

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$0.489

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$0.532

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Component Stockers USA

USA . 622 parts In-Stock

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$99.990

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A-Z Elektronik GmbH

Germany . 4,980 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,320 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Glotronic Ltd.

UK . 1,965 parts In-Stock

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Corphita

USA . 901 parts In-Stock

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Technical Specifications

Small Signal Field Effect Transistors (FET) IRLHS6276TR2PBF attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from International Rectifier

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

3.4 A

Maximum Drain Current (ID):

4.5 A

Maximum Drain-Source On Resistance:

.062 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRLHS6276TR2PBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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