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IRL3715ZCS

International Rectifier

IRL3715ZCS by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Transistor Element Material: SILICON; Avalanche Energy Rating (EAS): 44 mJ;

Median Price

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Lifecycle Status

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2

In-Stock Inventory

< 1k

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PC Components Company LLC

USA . 46 parts In-Stock

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Bristol Electronics

USA . 46 parts In-Stock

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46

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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A-Z Elektronik GmbH

Germany . 1,721 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,147 parts In-Stock

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GreenTree Electronics

Israel . 400 parts In-Stock

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400

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Microchip USA

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Technical Specifications

Power Field Effect Transistors (FET) IRL3715ZCS attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Avalanche Energy Rating (EAS):

44 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

50 A

Maximum Drain Current (ID):

50 A

Maximum Drain-Source On Resistance:

.011 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

225

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

200 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRL3715ZCS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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