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IRL3705NSTRL

International Rectifier

IRL3705NSTRL by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e0; Package Style (Meter): SMALL OUTLINE; Transistor Element Material: SILICON;

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3

In-Stock Inventory

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Prism Electronics

USA . 785 parts In-Stock

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Sea View Technologies

USA . 256 parts In-Stock

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Bristol Electronics

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 21,243 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,241 parts In-Stock

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Alle Elektronik GmbH

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Perfect Parts

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Microchip USA

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Technical Specifications

Power Field Effect Transistors (FET) IRL3705NSTRL attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Additional Features:

AVALANCHE RATED, HIGH RELIABILITY

Avalanche Energy Rating (EAS):

340 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

55 V

Maximum Drain Current (ID):

89 A

Maximum Drain-Source On Resistance:

.012 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

130 W

Maximum Pulsed Drain Current (IDM):

310 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRL3705NSTRL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

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