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IRL3102-006PBF

International Rectifier

IRL3102-006PBF by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; JESD-30 Code: R-PSFM-T3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Power Field Effect Transistors (FET) IRL3102-006PBF attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Avalanche Energy Rating (EAS):

220 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

61 A

Maximum Drain-Source On Resistance:

.013 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

240 A

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRL3102-006PBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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