Loading...

IRFZ44ESTRR

International Rectifier

IRFZ44ESTRR by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; JESD-30 Code: R-PSSO-G2; Minimum DS Breakdown Voltage: 60 V;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 356 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

356

$99.990

-

-

-

Technical Specifications

Power Field Effect Transistors (FET) IRFZ44ESTRR attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Additional Features:

AVALANCHE RATED, HIGH RELIABILITY

Avalanche Energy Rating (EAS):

220 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

48 A

Maximum Drain-Source On Resistance:

.023 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

192 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRFZ44ESTRR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.