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IRFI4019HG-117P

International Rectifier

IRFI4019HG-117P by International Rectifier

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 18 W; Additional Features: HIGH RELIABILITY; No. of Elements: 2;

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Modulus Dynamics

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$1.729

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$1.660

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$1.591

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Technical Specifications

Power Field Effect Transistors (FET) IRFI4019HG-117P attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Additional Features:

HIGH RELIABILITY

Avalanche Energy Rating (EAS):

77 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

150 V

Maximum Drain Current (Abs) (ID):

8.7 A

Maximum Drain Current (ID):

8.7 A

Maximum Drain-Source On Resistance:

.095 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSFM-T5

No. of Elements:

2

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

34 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRFI4019HG-117P Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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