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IRFD025PBF

International Rectifier

IRFD025PBF by International Rectifier

N-CHANNEL; Surface Mount: NO; Maximum Drain-Source On Resistance: .12 ohm; Maximum Drain Current (ID): 2.2 A; Peak Reflow Temperature (C): 260; Package Style (Meter): IN-LINE;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Small Signal Field Effect Transistors (FET) IRFD025PBF attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from International Rectifier

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

2.2 A

Maximum Drain-Source On Resistance:

.12 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDIP-T3

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Element Material:

SILICON

Trade Compliance

IRFD025PBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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