Loading...

IRF7820PBF

International Rectifier

IRF7820PBF by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Transistor Element Material: SILICON;

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 66,580 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

66,580

-

-

-

-

Vyrian

USA . 950 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

950

-

-

-

-

Digiode

USA . 152 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

152

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 8 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 11,680 parts In-Stock

1+ parts

$0.674

100+ parts

$0.647

1k+ parts

$0.620

10k+ parts

-

11,680

$0.674

$0.647

$0.620

-

Perfect Parts

USA . 7,240 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,240

-

-

-

-

Microchip USA

USA . 4,742 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,742

-

-

-

-

Corphita

USA . 769 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

769

-

-

-

-

Technical Specifications

Small Signal Field Effect Transistors (FET) IRF7820PBF attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from International Rectifier

Specs

Avalanche Energy Rating (EAS):

606 mJ

Minimum DS Breakdown Voltage:

200 V

Maximum Drain Current (Abs) (ID):

3.7 A

Maximum Drain Current (ID):

3.7 A

Maximum Drain-Source On Resistance:

.078 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

MS-012AA

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

2

No. of Elements:

1

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

29 A

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRF7820PBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.