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IRF5851

International Rectifier

IRF5851 by International Rectifier

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; Maximum Drain Current (Abs) (ID): 2.7 A; Package Body Material: PLASTIC/EPOXY;

Median Price

-

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 3,587 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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3,587

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Technical Specifications

Small Signal Field Effect Transistors (FET) IRF5851 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from International Rectifier

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

2.7 A

Maximum Drain Current (ID):

2.7 A

Maximum Drain-Source On Resistance:

.09 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

2

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRF5851 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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