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IRF540NL

International Rectifier

IRF540NL by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; JESD-30 Code: R-PSIP-T3; Operating Mode: ENHANCEMENT MODE;

Median Price

$4.140

Lifecycle Status

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DigiKey

USA . 2 parts In-Stock

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TEDSS.com

USA . 400 parts In-Stock

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$1.120

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$0.390

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Digiode

USA . 556 parts In-Stock

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$3.819

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Microfarads

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Modulus Dynamics

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$0.933

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$0.894

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Corphita

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Technical Specifications

Power Field Effect Transistors (FET) IRF540NL attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Additional Features:

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Avalanche Energy Rating (EAS):

185 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

33 A

Maximum Drain Current (ID):

33 A

Maximum Drain-Source On Resistance:

.044 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-262AA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

110 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Powers

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRF540NL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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