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IRF530N-024PBF

International Rectifier

IRF530N-024PBF by International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Case Connection: DRAIN; Maximum Drain Current (ID): 15 A; Package Style (Meter): FLANGE MOUNT;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Power Field Effect Transistors (FET) IRF530N-024PBF attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Case Connection:

DRAIN

Configuration:

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

15 A

Maximum Drain-Source On Resistance:

.11 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

60 W

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Element Material:

SILICON

Trade Compliance

IRF530N-024PBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

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