Loading...

IRF530-010

International Rectifier

IRF530-010 by International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Case Connection: DRAIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Median Price

-

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 86,460 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

86,460

-

-

-

-

Technical Specifications

Power Field Effect Transistors (FET) IRF530-010 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Avalanche Energy Rating (EAS):

69 mJ

Case Connection:

DRAIN

Configuration:

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

14 A

Maximum Drain-Source On Resistance:

.16 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

88 W

Maximum Pulsed Drain Current (IDM):

56 A

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRF530-010 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.