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IRF3205STRRPBF

International Rectifier

IRF3205STRRPBF by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Minimum Operating Temperature: -55 Cel; Maximum Drain-Source On Resistance: .008 ohm;

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Chip Stock

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Vyrian

USA . 500 parts In-Stock

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500

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Digiode

USA . 197 parts In-Stock

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197

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Modulus Dynamics

Lithuania . 16,565 parts In-Stock

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$1.634

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$1.566

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16,565

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A-Z Elektronik GmbH

Germany . 6,285 parts In-Stock

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Perfect Parts

USA . 4,480 parts In-Stock

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4,480

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Alle Elektronik GmbH

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Microchip USA

USA . 473 parts In-Stock

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Corphita

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Technical Specifications

Power Field Effect Transistors (FET) IRF3205STRRPBF attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Additional Features:

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Avalanche Energy Rating (EAS):

264 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

55 V

Maximum Drain Current (Abs) (ID):

110 A

Maximum Drain Current (ID):

75 A

Maximum Drain-Source On Resistance:

.008 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

211 pF

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

390 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

115 ns

Maximum Turn On Time (ton):

115 ns

Trade Compliance

IRF3205STRRPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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