Loading...

AUIRF3205ZSTRR

International Rectifier

AUIRF3205ZSTRR by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Terminal Finish: MATTE TIN OVER NICKEL; Transistor Application: SWITCHING;

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 619 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

619

-

-

-

-

Vyrian

USA . 489 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

489

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 308 parts In-Stock

1+ parts

$0.329

100+ parts

-

1k+ parts

-

10k+ parts

$0.316

308

$0.329

-

-

$0.316

Northwest PG Solutions

USA . 51 parts In-Stock

1+ parts

$0.362

100+ parts

-

1k+ parts

-

10k+ parts

$0.320

51

$0.362

-

-

$0.320

Modulus Dynamics

Lithuania . 13,975 parts In-Stock

1+ parts

$1.663

100+ parts

$1.596

1k+ parts

$1.530

10k+ parts

-

13,975

$1.663

$1.596

$1.530

-

Kepictronics

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Corphita

USA . 403 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

403

-

-

-

-

Technical Specifications

Power Field Effect Transistors (FET) AUIRF3205ZSTRR attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Additional Features:

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Avalanche Energy Rating (EAS):

250 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

55 V

Maximum Drain Current (Abs) (ID):

75 A

Maximum Drain Current (ID):

75 A

Maximum Drain-Source On Resistance:

.0065 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

440 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

AUIRF3205ZSTRR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.