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JANSR2N7481U3

International Rectifier Hirel Products

JANSR2N7481U3 by International Rectifier Hirel Products

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Maximum Feedback Capacitance (Crss): 50 pF; Reference Standard: MIL-19500;

Median Price

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Lifecycle Status

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8

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TTI

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Vyrian

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Digiode

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PC Components Company LLC

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Bristol Electronics

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Component Sense

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ComSIT Distribution GmbH

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NexGen Digital

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Modulus Dynamics

Lithuania . 10,285 parts In-Stock

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Corphita

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Technical Specifications

Power Field Effect Transistors (FET) JANSR2N7481U3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier Hirel Products

Specs

Avalanche Energy Rating (EAS):

70 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

22 A

Maximum Drain-Source On Resistance:

.06 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

50 pF

JESD-30 Code:

R-CBCC-N3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

CHIP CARRIER

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

88 A

Qualification:

Qualified

Reference Standard:

MIL-19500

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

65 ns

Maximum Turn On Time (ton):

125 ns

Trade Compliance

JANSR2N7481U3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

International Rectifier Hirel Products

In 2015, Infineon acquired the International Rectifier Corporation to bolster Infineon's position as a market leader in power semiconductors and add design and technical expertise. Infineon Technologies AG engages in the provision of semiconductor and system solutions. It operates through the following segments: Automotive, Industrial Power Control, Power & Sensor systems, Connected Secure Systems, and Other Operating Segments. The Automotive segment designs, develops, manufactures, and markets semiconductor for automotive applications. The Industrial Power Control segment involves in the design, development, manufacture, and marketing of semiconductors for the generation, transmission, and economy in the use of electrical energy. The Power & Sensor systems segment includes design, development, manufacture, and marketing of semiconductors for energy-efficient power supplies as well as for mobile devices and mobile phone network infrastructures. The Connected Secure Systems designs, develops, manufactures, and markets semiconductor-based security products for card applications and network systems. The company was founded on April 1, 1999 and is headquartered in Munich, Germany.

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