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SIDC85D170HX1SA2

Infineon Technologies

SIDC85D170HX1SA2 by Infineon Technologies

Infineon Technologies' SIDC85D170HX1SA2 is a single rectifier diode with 1700V reverse voltage and 150A output current. Ideal for fast soft recovery applications, it operates b/w -55°C to 150°C. This surface-mount diode in square package is uncased chip with no lead terminal form.

Median Price

$14.248

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

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$14.248

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50

$14.248

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Vyrian

USA . 3,617 parts In-Stock

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3,617

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Digiode

USA . 361 parts In-Stock

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361

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 177 parts In-Stock

1+ parts

$0.010

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177

$0.010

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Aztec Data Supply Inc.

USA . 208 parts In-Stock

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$0.070

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208

$0.070

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Semicontronic

India . 1,066 parts In-Stock

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$1.010

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$0.985

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$0.980

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1,066

$1.010

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$0.980

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Continental Prestige Electronics

USA . 74 parts In-Stock

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$14.248

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$13.963

74

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$13.963

Modulus Dynamics

Lithuania . 20,588 parts In-Stock

1+ parts

$14.248

100+ parts

$13.678

1k+ parts

$13.108

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20,588

$14.248

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Corohmni

South Africa . 438 parts In-Stock

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$14.248

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438

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AZTECH Wire

Italy . 896 parts In-Stock

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$14.322

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Microchip USA

USA . 4,410 parts In-Stock

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Argo Parts USA

USA . 4,062 parts In-Stock

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Corphita

USA . 624 parts In-Stock

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Overview

Unleash the power of innovation with the SIDC85D170HX1SA2 by Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers top-quality diodes and rectifiers that are designed for fast, soft recovery applications. With a maximum output current of 150A and a maximum repetitive peak reverse voltage of 1700V, this product offers unmatched performance and reliability. Whether you're looking to enhance the efficiency of your power supply or improve the performance of your electronic devices, the SIDC85D170HX1SA2 is the ultimate solution. Trust in Infineon to provide cutting-edge technology that meets and exceeds your expectations.

Feature Benefit Bullets

Config: SINGLE

A single configuration simplifies the setup and installation of the diode, making it easy to use and integrate into various systems.

Package Style: UNCASED CHIP

The unencased chip package style provides a compact and efficient design, ideal for space-constrained applications.

Application: FAST SOFT RECOVERY

This diode is specifically designed for fast soft recovery applications, ensuring efficient and reliable performance in high-speed circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this diode can withstand high temperatures, making it suitable for demanding environments.

Maximum Output Current: 150 A

The high maximum output current of 150A allows the diode to handle large amounts of current, making it suitable for high-power applications.

Maximum Repetitive Peak Reverse Voltage: 1700 V

The high maximum repetitive peak reverse voltage of 1700V ensures robust performance and protection against reverse voltage spikes.

Diode Element Material: SILICON

Silicon is a common material used in diodes due to its excellent electrical properties, making this diode a reliable choice for various applications.

Technical Specifications

Diodes & Rectifiers SIDC85D170HX1SA2 attributes and parameters. Explore more Diodes & Rectifiers devices from Infineon Technologies

Specs

Application:

FAST SOFT RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

S-XUUC-N1

Maximum Non Repetitive Peak Forward Current:

740 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

150 A

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1700 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SIDC85D170HX1SA2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.40

SB

8541.10.00.40

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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