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SIDC06D120H8X1SA2

Infineon Technologies

SIDC06D120H8X1SA2 by Infineon Technologies

SIDC06D120H8X1SA2 by Infineon is a single diode with 1200V peak reverse voltage, 27uA max reverse current, and operates b/w -40 to 175°C. Ideal for fast soft recovery applications, this square-shaped chip is surface mountable and made of silicon.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 6,716 parts In-Stock

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Nova Conductors

Japan . 1,000 parts In-Stock

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Digiode

USA . 727 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 274 parts In-Stock

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$0.020

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$0.143

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$0.130

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$0.117

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100

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Modulus Dynamics

Lithuania . 11,800 parts In-Stock

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$0.895

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$0.859

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$0.823

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Corohmni

South Africa . 1,021 parts In-Stock

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Semicontronic

India . 796 parts In-Stock

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$1.010

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$0.985

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$0.980

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Ampacity Inc.

Singapore . 875 parts In-Stock

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$3.010

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AZTECH Wire

Italy . 356 parts In-Stock

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$5.619

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QUARKTWIN TECHNOLOGY LTD

USA . 3,247 parts In-Stock

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Argo Parts USA

USA . 2,959 parts In-Stock

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Continental Prestige Electronics

USA . 1,350 parts In-Stock

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Bastille Electronics

Australia . 120 parts In-Stock

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Corphita

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Overview

Unlock a world of precision and reliability with the SIDC06D120H8X1SA2 by Infineon Technologies. As a leading manufacturer in the industry, Infineon guarantees top-notch quality and performance for all its products. This diode offers fast soft recovery, making it ideal for a wide range of applications. From industrial to automotive, this diode delivers exceptional value and benefits to customers looking for seamless operation and long-term durability. Trust in the expertise of Infineon and elevate your projects with the SIDC06D120H8X1SA2 diode.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes it easy to install and use.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly.

Max Reverse Current: 27 uA

Low reverse current ensures minimal power loss in operation.

Package Shape: SQUARE

Square shape provides a compact design for space-constrained applications.

Package Style: UNCASED CHIP

Uncased chip style offers flexibility in mounting options.

Application: FAST SOFT RECOVERY

Fast soft recovery improves efficiency and reduces energy loss.

Max Operating Temp: 175 °C

High operating temperature range for versatile applications.

Min Operating Temp: -40 °C

Low operating temperature allows for use in various environments.

Terminal Position: UPPER

Upper terminal position simplifies connections and layout design.

Diode Type: RECTIFIER DIODE

Rectifier diode type ensures reliable and stable performance.

Terminal Form: NO LEAD

No lead terminal form enhances durability and reliability.

Max Repetitive Peak Reverse Voltage: 1200 V

High peak reverse voltage rating for robust performance in demanding conditions.

Diode Element Material: SILICON

Silicon material provides excellent electrical properties for dependable operation.

Technical Specifications

Diodes & Rectifiers SIDC06D120H8X1SA2 attributes and parameters. Explore more Diodes & Rectifiers devices from Infineon Technologies

Specs

Application:

FAST SOFT RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

S-XUUC-N1

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

27 uA

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SIDC06D120H8X1SA2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.40

SB

8541.10.00.40

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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