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S79FL01GSDSBHVC10

Infineon Technologies

S79FL01GSDSBHVC10 by Infineon Technologies

Infineon's S79FL01GSDSBHVC10 is a 128MX8 NOR flash memory with 80 MHz clock frequency, 3V supply voltage, and SPI serial bus. It operates in industrial temperature range (-40 to 105 °C) and offers 100000 write/erase cycles. Ideal for applications requiring high-speed data storage in compact devices.

Median Price

$13.637

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,386 parts In-Stock

1+ parts

$19.810

100+ parts

$16.950

1k+ parts

$15.980

10k+ parts

-

1,386

$19.810

$16.950

$15.980

-

Rochester

USA . 2,753 parts In-Stock

1+ parts

-

100+ parts

$10.910

1k+ parts

$9.760

10k+ parts

$9.180

2,753

-

$10.910

$9.760

$9.180

Verical

USA . 1,394 parts In-Stock

1+ parts

-

100+ parts

$13.637

1k+ parts

$12.200

10k+ parts

$11.475

1,394

-

$13.637

$12.200

$11.475

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 86 parts In-Stock

1+ parts

$15.314

100+ parts

-

1k+ parts

-

10k+ parts

-

86

$15.314

-

-

-

Vyrian

USA . 653 parts In-Stock

1+ parts

$16.120

100+ parts

-

1k+ parts

-

10k+ parts

-

653

$16.120

-

-

-

Flip Electronics

USA . 1,690 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,690

-

-

-

-

Nova Conductors

Japan . 200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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200

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 5,596 parts In-Stock

1+ parts

$5.540

100+ parts

$5.318

1k+ parts

$5.097

10k+ parts

-

5,596

$5.540

$5.318

$5.097

-

Ampacity Inc.

Singapore . 1,182 parts In-Stock

1+ parts

$13.700

100+ parts

-

1k+ parts

-

10k+ parts

-

1,182

$13.700

-

-

-

Corphita

USA . 810 parts In-Stock

1+ parts

$14.508

100+ parts

-

1k+ parts

-

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810

$14.508

-

-

-

Microchip USA

USA . 2,597 parts In-Stock

1+ parts

$42.728

100+ parts

-

1k+ parts

-

10k+ parts

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2,597

$42.728

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-

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QUARKTWIN TECHNOLOGY LTD

USA . 22,141 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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22,141

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Argo Parts USA

USA . 5,405 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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5,405

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-

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Continental Prestige Electronics

USA . 2,426 parts In-Stock

1+ parts

-

100+ parts

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2,426

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-

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Aranea Global

USA . 50 parts In-Stock

1+ parts

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1k+ parts

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50

-

-

-

-

Overview

Unlock the power of reliable and high-performance flash memory with the S79FL01GSDSBHVC10 by Infineon Technologies. Manufactured with premium quality materials and cutting-edge technology, this flash memory device offers unparalleled speed and efficiency for a wide range of applications. Whether you need secure data storage or fast program execution, this product delivers exceptional value and benefits to meet your needs. Trust in the superior capabilities of Infineon Technologies and experience the advantages of seamless integration and optimized performance with the S79FL01GSDSBHVC10.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable devices.

Surface Mount: YES

Surface mount capability ensures easy installation on PCBs, saving space and simplifying assembly processes.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer rates and improved performance in data-intensive applications.

Nominal Supply Voltage / Vsup (V): 3

Operating at a standard voltage of 3V ensures compatibility with a wide range of systems and reduces power consumption.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature, the product can withstand harsh environmental conditions and maintain reliability.

Organization: 128MX8

Organized as 128MX8, the memory offers a balance between capacity and speed, suitable for various applications.

Output Characteristics: 3-STATE

Supporting 3-STATE output allows for flexible data bus control and efficient data transmission.

Write Protection: HARDWARE/SOFTWARE

Offering both hardware and software write protection ensures data security and prevents accidental data loss or corruption.

Technology: CMOS

Utilizing CMOS technology provides low power consumption, high speed, and compatibility with a wide range of devices.

Memory Density: 1073741824 bit

With a high memory density of 1073741824 bits, the product can store large amounts of data efficiently.

Technical Specifications

Flash Memory S79FL01GSDSBHVC10 attributes and parameters. Explore more Flash Memory devices from Infineon Technologies

Specs

Maximum Clock Frequency (fCLK):

80 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PBGA-B24

Length:

8 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

24

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA24,5X5,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

SERIAL

Programming Voltage (V):

3

Maximum Seated Height:

1.2 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.0006 Amp

Maximum Supply Current:

200 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Type:

NOR TYPE

Width:

6 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

S79FL01GSDSBHVC10 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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