Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Infineon Technologies' IRL3705NPBF is a N-CHANNEL Power FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a max IDM of 310A and EAS of 340mJ, this ENHANCEMENT MODE transistor has a 0.012 ohm Drain-Source On Resistance. Its PLASTIC/EPOXY package and 175°C operating temperature make it suitable for high-power FLANGE MOUNT designs.
Median Price
$2.470
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29
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1k+
Chip1Stop
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$0.689
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Bürklin Elektronik
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Farnell
$2.550
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$0.872
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Arrow
$2.686
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Mouser Electronics
$3.060
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DigiKey
$3.270
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Newark
$3.400
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EBV Elektronik
Verical
$1.233
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Future Electronics
$1.450
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Digiode
$0.695
Nova Conductors
$1.032
Maritex
$1.658
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TME
$2.600
$1.230
$0.900
$0.710
American Microsemiconductor Inc.
$4.980
NAC Semi
$1.600
Vyrian
IBS Electronics
$2.356
$2.314
Chip Stock
Cyclops Electronics Ltd
Velocity Electronics
Schukat
$0.808
$0.648
Bristol Electronics
Atlantic Semiconductor
Rutronik
$0.772
$0.596
Micros
$1.134
$1.087
J2 Sourcing AB
Cogito LLC
Corohmni
$0.442
Ampacity Inc.
$0.540
Corphita
$0.659
Aztec Data Supply Inc.
Component Stockers USA
$1.360
$0.740
Modulus Dynamics
$1.391
$1.335
$1.280
Continental Prestige Electronics
$1.890
$1.210
$0.935
Eastek
$1.444
Perfect Parts
Futuretech Components
GreenTree Electronics
A-Z Elektronik GmbH
Kepictronics
Alle Elektronik GmbH
Benley Electronics
Argo Parts USA
Assy Fe
Lixinc
S.R.D Solutions
The use of plastic/epoxy material in the package body makes the product lightweight and durable, making it easier to handle and ensuring long-lasting performance.
The minimum breakdown voltage of 55V ensures reliable operation and protection against voltage spikes, making it suitable for a wide range of applications.
With a high maximum pulsed drain current of 310A, this product can handle high power requirements and surge currents, making it ideal for demanding switching applications.
The high avalanche energy rating of 340mJ ensures the product can withstand energy spikes and transients, enhancing its overall reliability and robustness.
With a maximum power dissipation of 130W, this product can handle high power levels efficiently, making it a reliable choice for various switching applications.
The high maximum operating temperature of 175°C allows the product to operate in extreme conditions without risk of damage or failure, providing added durability and reliability.
The low on-resistance of 0.012 ohm minimizes power losses and improves efficiency, making this product an ideal choice for high-performance switching applications.
Power Field Effect Transistors (FET) IRL3705NPBF attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies
Additional Features:
Avalanche Energy Rating (EAS):
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
IRL3705NPBF Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.95
SB
8541.29.00.80
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
1N4148
Jgd Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Maximum Operating Temperature: 175 Cel; Maximum Reverse Recovery Time: .004 us; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Forward Voltage (VF): 1 V;
CSNF651
Honeywell Sensing And Control
CSNF651 by Honeywell Sensing And Control is an industrial-grade analog circuit with 3 terminals. It operates b/w -40 to 85°C, supporting supply voltages from -15V to 15V. Ideal for applications requiring a special shape rectangular package style and through-hole terminal form.
1552200168
Molex
WIRE AND CABLE;
LM7805CT
National Semiconductor
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
LM107H/883
Rochester Electronics
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Maximum Average Bias Current (IIB): .1 uA;
1N4148WS
Rectron
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM555CM
Intersil
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
261
Mercury Systems
Other Interface ICs; Temperature Grade: MILITARY; Terminal Form: FLAT; No. of Terminals: 14; Package Code: DFP; Package Shape: SQUARE;
BSS138BKW,115
NXP Semiconductors
NXP Semiconductors' BSS138BKW,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A ID. Ideal for SWITCHING applications, it features a built-in diode, 1.6 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it meets AEC-Q101 standards.
LM358MX
Fairchild Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
ROHM
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LL4148
Itt Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
ERJ3GEY0R00V
Panasonic
ERJ3GEY0R00V by Panasonic is a SMT fixed resistor with 0 ohm resistance, suitable for jumper applications. It features a metal glaze/thick film technology, rated for temperatures b/w -55 to 155 °C. With a compact rectangular construction and matte tin over nickel terminal finish, it is ideal for surface mount installations in various electronic devices.
SMBJ18CA
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Polarity: BIDIRECTIONAL; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V;
LM107H
General Electric Solid State
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Minimum Voltage Gain: 25000;
B340A-13-F
SPC TECHNOLOGY/ MULTICOMP
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
STMicroelectronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138LT3G
Onsemi
BSS138LT3G by Onsemi is a N-CHANNEL FET with a min DS breakdown voltage of 50V. It is used for switching applications and has a max drain current of 0.2A and max drain-source on resistance of 3.5 ohm.
CRGCQ0805F10R
TE Connectivity
TE Connectivity's CRGCQ0805F10R is a 10 ohm fixed resistor with 1% tolerance and 400 ppm/°C temperature coefficient. It is a surface mount thick film resistor in an 0805 package, suitable for applications requiring precise resistance values in compact electronic circuits.
General Semiconductor
IRF5305PBF
Infineon Technologies
IRF5305PBF by Infineon is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 110A IDM and 0.06 ohm RDS(ON), suitable for high-power circuits. With a max power dissipation of 110W and operating temperature up to 175°C, it ensures reliable performance in various environments.
IRF540NLPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; Maximum Drain Current (ID): 33 A; Maximum Time At Peak Reflow Temperature (s): 30;
BSP149H6327XTSA1
Infineon Technologies' BSP149H6327XTSA1 is a N-CHANNEL Power FET with 200V DS breakdown voltage. It has a max drain current of 0.66A and operates in depletion mode. This transistor, with its small outline package style, is suitable for various applications requiring high power dissipation and temperature resistance up to 150°C.
IRFS4010TRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; Maximum Operating Temperature: 175 Cel; Package Shape: RECTANGULAR;
FDMS86101DC
FDMS86101DC by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 200A IDM, and 0.0075 ohm RDS(on). Ideal for SWITCHING applications, it features a built-in diode, operates in ENHANCEMENT MODE, and has a max power dissipation of 125W.
IRF9540PBF
Vishay Intertechnology
Vishay Intertechnology's IRF9540PBF is a P-CHANNEL FET with 100V DS Breakdown Voltage and 72A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 150W, -55 to 175°C operating temperature range, and 0.2 ohm Drain-Source On Resistance.
FDD4141_F085
FDD4141_F085 by Fairchild Semiconductor is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating from -55 to 150 °C, this MOSFET has 0.0123 ohm Drain-Source On Resistance.
FDS4465
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Time At Peak Reflow Temperature (s): 30; Operating Mode: ENHANCEMENT MODE;
BSC016N06NSATMA1
Infineon's BSC016N06NSATMA1 is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a max IDM of 400A and EAS of 380mJ, ensuring efficient operation. With a drain-source on resistance of 0.0016 ohm and operating temperature up to 150°C, it offers high performance in a small outline package.
2N7002
North American Philips Discrete Products Div
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): .115 A;
IRFP4468PBF
IRFP4468PBF by Infineon is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It has a max IDM of 1120A and EAS of 740mJ, ideal for SWITCHING applications. With 0.0026 ohm RDS(on) and 520W Pdiss, it operates in ENHANCEMENT MODE at up to 175°C.
FDS2572
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; No. of Elements: 1; Transistor Application: SWITCHING;
FDS3890
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
FDD4243-F085P
FDD4243-F085P by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 14A, 0.044 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a compact SMALL OUTLINE package and AEC-Q101 standard compliance, it ensures reliable performance in automotive electronics.
IRFR120NTRPBF
IRFR120NTRPBF by Infineon Technologies is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 38A Pulsed Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 0.21 ohm On Resistance, and operates in ENHANCEMENT MODE.
IRF9530NSTRLPBF
IRF9530NSTRLPBF by Infineon is a P-CHANNEL FET with 100V DS Breakdown Voltage, 56A IDM, and 0.2 ohm RDS. It's used for SWITCHING applications in ENHANCEMENT MODE with 175°C Max Operating Temp.
STP11NK50ZFP
STP11NK50ZFP by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, 40A IDM, and 0.52 ohm RDS(on). Ideal for SWITCHING applications due to its 30W power dissipation, 190mJ EAS rating, and ENHANCEMENT MODE operation at up to 150°C.
IRF640
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 200 V; JESD-30 Code: R-PSFM-T3; Package Body Material: PLASTIC/EPOXY;
FQD17P06TM
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 44 W; JESD-609 Code: e3; Case Connection: DRAIN;
DMG2305UX-13
Diodes Incorporated
DMG2305UX-13 by Diodes Inc. is a P-channel FET with 20V DS breakdown voltage and 4.2A max drain current, ideal for switching applications. It features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 1.4W. This MOSFET is surface mountable, with Gull Wing terminals and can withstand temperatures up to 150°C.
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IRL3803STRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Maximum Time At Peak Reflow Temperature (s): 30; Package Body Material: PLASTIC/EPOXY;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Maximum Drain-Source On Resistance: .006 ohm; JESD-30 Code: R-PSSO-G2;
IRL3803PBF
Infineon's IRL3803PBF is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 470A IDM and 610mJ EAS, it operates in ENHANCEMENT MODE with 0.006 ohm RDS(ON). The PLASTIC/EPOXY package has a max power dissipation of 150W and can withstand temperatures from -55 to 175 °C.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; JEDEC-95 Code: TO-220AB; Qualification: Not Qualified;
IRL3715ZSPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING;
IRL3705NSTRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Maximum Pulsed Drain Current (IDM): 310 A; Transistor Element Material: SILICON;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 175 Cel; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): 30;
IRL3705NPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; Maximum Pulsed Drain Current (IDM): 310 A; No. of Elements: 1;
IRL3715LPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 71 W; No. of Terminals: 3; JEDEC-95 Code: TO-262AA;
IRL3715PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 71 W; No. of Terminals: 3; Transistor Application: SWITCHING;
IRL3715SPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.8 W; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier; Maximum Drain-Source On Resistance: .014 ohm;
IRL3715ZLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 45 W; Package Style (Meter): IN-LINE; Package Shape: RECTANGULAR;
IRL3715ZPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 45 W; Avalanche Energy Rating (EAS): 44 mJ; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRL3705ZPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; Maximum Drain-Source On Resistance: .008 ohm; Additional Features: AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Element Material: SILICON;
IRL3102-029
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; Package Body Material: PLASTIC/EPOXY; Additional Features: LOGIC LEVEL COMPATIBLE;
IRL3102-011
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRL3102-030
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Package Style (Meter): FLANGE MOUNT; Maximum Pulsed Drain Current (IDM): 240 A;
IRL3102-031
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Finish: MATTE TIN OVER NICKEL; Transistor Element Material: SILICON; Maximum Pulsed Drain Current (IDM): 240 A;
IRL3705N-009PBF
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): FLANGE MOUNT;
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