Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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IPP180N10N3G by Infineon Technologies is a N-CHANNEL FET with 100V DS breakdown voltage. It has a max IDM of 172A and EAS of 50mJ, suitable for switching applications. With 0.018 ohm RDS(on) and 175°C max operating temp, it's ideal for high-power tasks in various industries.
Median Price
$1.271
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5
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Mouser Electronics
1+ parts
$1.920
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$0.811
1k+ parts
$0.581
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$0.529
RS (Exports)
-
$0.622
$0.571
Vyrian
Digiode
$1.254
Cyclops Electronics Ltd
Modulus Dynamics
$1.145
$1.099
$1.053
Corphita
$1.188
Lixinc
Infinite Electronics LLP (Excess)
Perfect Parts
Kepictronics
A-Z Elektronik GmbH
Alle Elektronik GmbH
Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.
Offers better conductivity and efficiency compared to P-channel transistors, making it suitable for high power applications.
Can handle high voltage operations, making it suitable for use in power electronics applications.
Capable of handling high current spikes, ideal for applications where intermittent high power is required.
Can dissipate heat effectively, allowing for continuous operation without overheating.
Provides high efficiency and fast switching speeds, making it ideal for switching applications.
Can operate at high temperatures without degradation, suitable for industrial applications.
Low on-resistance leads to minimal power loss and heat generation, increasing efficiency.
Power Field Effect Transistors (FET) IPP180N10N3G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies
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IPP180N10N3G Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - Mult Dev A/T 26/Apr/2021
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
261
New England Microwave
Other Interface ICs; No. of Terminals: 14; Package Equivalence Code: FL14(UNSPEC); Power Supplies (V): +-5,-15; Package Body Material: PLASTIC/EPOXY; Surface Mount: YES;
M24308/2-1F
Bel Fuse
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Mixed Contacts: NO;
SMBJ18CA
Daco Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Forward International Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Nominal Breakdown Voltage: 21.05 V; Maximum Clamping Voltage: 29.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
ERJ2RKF1002X
Panasonic
Panasonic's ERJ2RKF1002X is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 compliance and operating temperature range of -55 to 155 °C.
2N2222A
Semitronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
OPA2277UA/2K5
Texas Instruments
OPA2277UA/2K5 by Texas Instruments is a dual operational amplifier with low offset voltage of 100 uV and micropower consumption of 0.004 uA. Ideal for industrial applications, it offers high common mode rejection ratio of 140 dB and unity gain bandwidth of 1 MHz. With a compact rectangular package style, it is suitable for surface mount designs in various electronic systems.
LL4148
SPC TECHNOLOGY/ MULTICOMP
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
BAV99
Onsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358AN
Philips Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Eic Semiconductor
1N4148
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Transistor & Electronic
SS14
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
ULN2803A
ULN2803A by Texas Instruments is a peripheral driver with 8 functions. It has a max supply voltage of 3V and can operate in temperatures ranging from -40 to 85°C. This IC is commonly used as a buffer or inverter based peripheral driver for various applications.
Jgd Semiconductors
RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; Maximum Non Repetitive Peak Forward Current: 30 A; Maximum Forward Voltage (VF): .55 V; No. of Phases: 1;
Panjit International
LM358N
Micro Commercial Components
PSMN040-100MSEX
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Avalanche Energy Rating (EAS): 54 mJ; Transistor Application: SWITCHING;
BSZ100N06LS3GATMA1
Infineon Technologies
BSZ100N06LS3GATMA1 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, 80A IDM, and 0.0179 ohm RDS. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package: PLASTIC/EPOXY, Surface Mountable, with DUAL terminals and DRAIN case connection.
IRFR5410TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 66 W; Avalanche Energy Rating (EAS): 194 mJ; Additional Features: HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE;
IRLML0060TRPBF
Infineon's IRLML0060TRPBF is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, 11A Max Pulsed Drain Current, and 0.092 ohm Max Drain-Source On Resistance. Operating in -55 to 150 °C range, it comes in small outline package suitable for surface mount technology.
IRF7507TRPBF
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Pulsed Drain Current (IDM): 19 A; Package Style (Meter): SMALL OUTLINE;
IRF7410TRPBF
Infineon's IRF7410TRPBF is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 65A IDM, 0.007 ohm RDS(on), and operates in ENHANCEMENT MODE. With GULL WING terminals and SMALL OUTLINE package, it can withstand -55 to 150 °C temperatures.
AUIRF7341QTR
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.4 W; Terminal Form: GULL WING; Avalanche Energy Rating (EAS): 140 mJ;
AUIRFN8459TR
AUIRFN8459TR by Infineon Technologies is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 320A IDM, 66mJ EAS, and 0.0059 ohm Drain-Source On Resistance. This SMALL OUTLINE transistor has DUAL terminals and AEC-Q101 standard compliance.
AUIRFR5305TRL
AUIRFR5305TRL by Infineon Technologies is a P-CHANNEL FET with 55V DS Breakdown Voltage and 110A IDM. Ideal for SWITCHING applications, it features a 0.065 ohm Drain-Source On Resistance and 280mJ Avalanche Energy Rating. Suitable for automotive use with AEC-Q101 standard compliance.
BBS3002-DL-1E
Sanyo Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Package Shape: RECTANGULAR; Case Connection: DRAIN;
IRFZ44NS
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; No. of Elements: 1; Package Shape: RECTANGULAR;
IRFR4620TRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 144 W; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier;
FDS6680A
FDS6680A by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 50A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2.5W and can handle up to 12.5A drain current.
TN2510N8-G
Supertex
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; JESD-30 Code: R-PSSO-F3; Maximum Feedback Capacitance (Crss): 25 pF;
LND150N8-G
Microchip Technology
LND150N8-G by Microchip is a N-CHANNEL FET with 0.03A IDM, ideal for SWITCHING applications. Operating in DEPLETION MODE, it has a 1.6W power dissipation and 1000 ohm RDS(on). With a peak temperature of 260C, it's suitable for surface mount designs in various electronic systems.
IRF7493TRPBF-1
Power Field-Effect Transistors;
STP55NF06
STMicroelectronics
STP55NF06 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 200A IDM, and 0.018 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175°C, making it suitable for high-power tasks.
BSC016N06NSATMA1
Infineon's BSC016N06NSATMA1 is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a max IDM of 400A and EAS of 380mJ, ensuring efficient operation. With a drain-source on resistance of 0.0016 ohm and operating temperature up to 150°C, it offers high performance in a small outline package.
FDS3890
FDS3890 by Onsemi is a N-CHANNEL Power FET with 80V DS Breakdown Voltage and 20A IDM. Ideal for SWITCHING applications, it features a SEPARATE configuration with 2 ELEMENTS, built-in DIODE, and 0.044 ohm Drain-Source On Resistance. The transistor operates in ENHANCEMENT MODE, has a max power dissipation of 2W, and can withstand temperatures up to 175°C.
BSP315PH6327
Infineon's BSP315PH6327 is a P-CHANNEL FET with 60V DS Breakdown Voltage and 4.68A IDM. Ideal for automotive applications, it features a built-in diode, 0.8 ohm RDS(on), and 24mJ EAS rating. AEC-Q101 compliant, this MOSFET has a small outline package and matte tin finish for enhanced performance in harsh environments.
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IPP120P04P4L03AKSA2
IPP120P04P4L03AKSA2 by Infineon is a P-CHANNEL FET with 40V DS Breakdown Voltage, 480A IDM, and 0.0052 ohm RDS(ON). Ideal for automotive applications due to AEC-Q101 standard compliance and 175°C max operating temp.
IPP120N20NFDAKSA1
IPP120N20NFDAKSA1 by Infineon is a N-CHANNEL FET with 200V DS Breakdown Voltage. It has 336A IDM and 0.012 ohm RDS(on), suitable for power applications. Ideal for enhancement mode operation in high-current circuits, offering 375mJ EAS rating.
IPP110N20N3GXKSA1
IPP110N20N3GXKSA1 by Infineon is a N-CHANNEL FET with 200V DS Breakdown Voltage, 0.011 ohm RDS(on), and 352A IDM. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in diode. Suitable for high-power systems requiring efficient current handling in RECTANGULAR package style.
IPP17N25S3100AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 107 W; Terminal Form: THROUGH-HOLE; Avalanche Energy Rating (EAS): 54 mJ;
IPP110N20N3G
IPP110N20N3G by Infineon Technologies is a power FET with N-channel configuration and built-in diode. It has a min DS breakdown voltage of 200V, max pulsed drain current of 352A, and max power dissipation of 300W. This transistor is commonly used for switching applications in various industries.
IPP12CN10LGXKSA1
IPP12CN10LGXKSA1 by Infineon Technologies is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It has a max IDM of 276A and EAS of 150mJ, suitable for SWITCHING applications. The transistor operates in ENHANCEMENT MODE, with a max ID of 69A and 0.012 ohm Drain-Source Resistance.
IPP100N06S2L05AKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 3; JEDEC-95 Code: TO-220AB;
IPP100N08S2L07AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Drain Current (ID): 100 A; Minimum DS Breakdown Voltage: 75 V;
IPP180N10N3GXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 43 A; Terminal Form: THROUGH-HOLE; Package Shape: RECTANGULAR;
IPP126N10N3GXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 70 mJ; JESD-609 Code: e3; Terminal Finish: TIN;
IPP100N06S205AKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; Package Style (Meter): FLANGE MOUNT; Terminal Form: THROUGH-HOLE;
IPP100N06S205AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 55 V;
IPP100N04S2L03XK
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: .0033 ohm; Package Body Material: PLASTIC/EPOXY;
IPP100N04S204XK
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): FLANGE MOUNT; No. of Elements: 1;
IPP100N06S205XK
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Maximum Pulsed Drain Current (IDM): 400 A; Maximum Drain-Source On Resistance: .005 ohm;
IPP100N04S3-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; Terminal Finish: TIN; No. of Elements: 1;
IPP100N06S2L-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; JESD-609 Code: e3; Qualification: Not Qualified;
IPP100N06S2L05AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Package Style (Meter): FLANGE MOUNT; Maximum Drain Current (ID): 100 A;
IPP100N04S204AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 400 A; Minimum DS Breakdown Voltage: 40 V; Package Style (Meter): FLANGE MOUNT;
IPP100N04S2L-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; JESD-609 Code: e3; Package Shape: RECTANGULAR;
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