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BSS225H6327FTSA1

Infineon Technologies

BSS225H6327FTSA1 by Infineon Technologies

Infineon BSS225H6327FTSA1 is a N-CHANNEL FET with 600V DS breakdown voltage. It features a built-in diode, 45 ohm RDS(on), and 4.4pF Crss. Ideal for applications requiring small outline SMD components in enhancement mode operation.

Median Price

$0.434

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 2,026 parts In-Stock

1+ parts

$0.886

100+ parts

$0.357

1k+ parts

$0.243

10k+ parts

-

2,026

$0.886

$0.357

$0.243

-

Distrelec

Netherlands . 1,000 parts In-Stock

1+ parts

$0.886

100+ parts

$0.731

1k+ parts

$0.532

10k+ parts

$0.488

1,000

$0.886

$0.731

$0.532

$0.488

Mouser Electronics

USA . 4,031 parts In-Stock

1+ parts

$1.030

100+ parts

$0.421

1k+ parts

$0.264

10k+ parts

$0.184

4,031

$1.030

$0.421

$0.264

$0.184

DigiKey

USA . 6,564 parts In-Stock

1+ parts

$1.130

100+ parts

$0.456

1k+ parts

$0.350

10k+ parts

-

6,564

$1.130

$0.456

$0.350

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Arrow

USA . 11,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.196

10k+ parts

$0.167

11,000

-

-

$0.196

$0.167

Verical

USA . 11,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.196

10k+ parts

$0.167

11,000

-

-

$0.196

$0.167

EBV Elektronik

Germany . 3,000 parts In-Stock

1+ parts

-

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-

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3,000

-

-

-

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Farnell

UK . 2,086 parts In-Stock

1+ parts

-

100+ parts

$0.231

1k+ parts

$0.168

10k+ parts

$0.134

2,086

-

$0.231

$0.168

$0.134

Element14

Singapore . 2,086 parts In-Stock

1+ parts

-

100+ parts

$0.488

1k+ parts

$0.296

10k+ parts

$0.263

2,086

-

$0.488

$0.296

$0.263

Future Electronics

Canada . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.148

10k+ parts

$0.142

1,000

-

-

$0.148

$0.142

RS (Exports)

UK . 940 parts In-Stock

1+ parts

-

100+ parts

$0.379

1k+ parts

$0.324

10k+ parts

-

940

-

$0.379

$0.324

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Chip1Stop

Japan . 845 parts In-Stock

1+ parts

-

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845

-

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Distributors (In-Stock)

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.294

100+ parts

-

1k+ parts

-

10k+ parts

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10

$0.294

-

-

-

Digiode

USA . 91 parts In-Stock

1+ parts

$0.502

100+ parts

-

1k+ parts

-

10k+ parts

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91

$0.502

-

-

-

TME

Poland . 262 parts In-Stock

1+ parts

$0.650

100+ parts

$0.225

1k+ parts

$0.215

10k+ parts

-

262

$0.650

$0.225

$0.215

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Vyrian

USA . 13,524 parts In-Stock

1+ parts

-

100+ parts

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13,524

-

-

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NAC Semi

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.700

10k+ parts

$0.636

6,000

-

-

$0.700

$0.636

VNN

France . 4,652 parts In-Stock

1+ parts

-

100+ parts

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4,652

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Chip Stock

USA . 3,500 parts In-Stock

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3,500

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IBS Electronics

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.463

10k+ parts

$0.205

2,000

-

-

$0.463

$0.205

Rutronik

Germany . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.183

10k+ parts

$0.146

1,000

-

-

$0.183

$0.146

Micros

Poland . 997 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.246

10k+ parts

-

997

-

-

$0.246

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Partservice

France . 997 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.234

10k+ parts

$0.234

997

-

-

$0.234

$0.234

Micros sp.j. W. Kędra i J. Lic

Poland . 997 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.251

10k+ parts

$0.251

997

-

-

$0.251

$0.251

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 13,582 parts In-Stock

1+ parts

$0.150

100+ parts

-

1k+ parts

-

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13,582

$0.150

-

-

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Argo Parts USA

USA . 4,439 parts In-Stock

1+ parts

$0.294

100+ parts

-

1k+ parts

-

10k+ parts

$0.285

4,439

$0.294

-

-

$0.285

Corphita

USA . 540 parts In-Stock

1+ parts

$0.475

100+ parts

-

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-

10k+ parts

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540

$0.475

-

-

-

Component Stockers USA

USA . 30,002 parts In-Stock

1+ parts

$0.540

100+ parts

$0.280

1k+ parts

$0.160

10k+ parts

$0.190

30,002

$0.540

$0.280

$0.160

$0.190

Continental Prestige Electronics

USA . 1,939 parts In-Stock

1+ parts

$0.612

100+ parts

$0.360

1k+ parts

$0.188

10k+ parts

$0.180

1,939

$0.612

$0.360

$0.188

$0.180

Aztec Data Supply Inc.

USA . 222 parts In-Stock

1+ parts

$0.664

100+ parts

-

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222

$0.664

-

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Corohmni

South Africa . 228 parts In-Stock

1+ parts

$0.805

100+ parts

-

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-

10k+ parts

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228

$0.805

-

-

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Modulus Dynamics

Lithuania . 18,883 parts In-Stock

1+ parts

$1.728

100+ parts

$1.659

1k+ parts

$1.590

10k+ parts

-

18,883

$1.728

$1.659

$1.590

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Advanced Electronics

New Zealand . 300 parts In-Stock

1+ parts

$2.144

100+ parts

$1.951

1k+ parts

$1.758

10k+ parts

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300

$2.144

$1.951

$1.758

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Lixinc

USA . 10,379 parts In-Stock

1+ parts

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100+ parts

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10,379

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

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5,000

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Perfect Parts

USA . 2,699 parts In-Stock

1+ parts

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2,699

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-

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GreenTree Electronics

Israel . 1,000 parts In-Stock

1+ parts

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1,000

-

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-

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Overview

Discover the reliable BSS225H6327FTSA1 by Infineon Technologies, a top-tier manufacturer in the field of small signal field-effect transistors. This single N-channel FET with built-in diode offers high-quality performance and versatility in a compact package. Ideal for a variety of applications, this enhancement mode transistor boasts a minimum DS breakdown voltage of 600V and maximum drain current of 0.09A. Experience the value and benefits of Infineon's advanced technology in your next project with the BSS225H6327FTSA1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the transistor, making it long-lasting and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel FETs offer higher electron mobility compared to P-channel FETs, resulting in better performance and efficiency.

Minimum DS Breakdown Voltage: 600 V

With a high breakdown voltage, this transistor can handle higher voltages safely, making it suitable for high-power applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs are normally-off devices, providing better control over the flow of current and lower power consumption.

Maximum Drain Current (ID): 0.09 A

This transistor can handle a maximum drain current of 0.09A, suitable for low to medium power applications.

Maximum Drain-Source On Resistance: 45 ohm

With a low on-resistance, this transistor reduces power losses and improves efficiency in circuit applications.

Maximum Time At Peak Reflow Temperature (s): 30

This transistor can withstand reflow soldering process for up to 30 seconds at peak temperature, ensuring reliable solder joints.

Maximum Feedback Capacitance (Crss): 4.4 pF

The low feedback capacitance of this transistor reduces the risk of oscillations and improves high-frequency performance.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standards ensures reliable performance and quality for automotive applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSS225H6327FTSA1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (ID):

.09 A

Maximum Drain-Source On Resistance:

45 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

4.4 pF

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

BSS225H6327FTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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