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BGX50A

Infineon Technologies

BGX50A by Infineon Technologies

BGX50A by Infineon Technologies is a bridge rectifier diode with 4 elements, featuring a max reverse recovery time of 0.006 us. This small outline diode has a min breakdown voltage of 50V and can handle a max output current of 0.14A. Ideal for applications requiring efficient rectification in compact electronic circuits.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

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Goldney Electronics S.L.

Spain . 37,187 parts In-Stock

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ComSIT Distribution GmbH

Germany . 4,500 parts In-Stock

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Sinequanon

UK . 3,300 parts In-Stock

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Vyrian

USA . 356 parts In-Stock

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356

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Digiode

USA . 292 parts In-Stock

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Manotoh

Italy . 146 parts In-Stock

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Prism Electronics

USA . 108 parts In-Stock

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VNN

France . 93 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Ampacity Inc.

Singapore . 803 parts In-Stock

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$0.010

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803

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Corohmni

South Africa . 395 parts In-Stock

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$0.048

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395

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Aztec Data Supply Inc.

USA . 296 parts In-Stock

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$0.080

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Modulus Dynamics

Lithuania . 27,410 parts In-Stock

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$0.120

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$0.115

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$0.110

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Semicontronic

India . 1,644 parts In-Stock

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$3.010

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$2.935

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$2.920

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AZTECH Wire

Italy . 767 parts In-Stock

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$10.686

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 10,400 parts In-Stock

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Lixinc

USA . 6,678 parts In-Stock

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Continental Prestige Electronics

USA . 4,437 parts In-Stock

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Kepictronics

USA . 2,600 parts In-Stock

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Argo Parts USA

USA . 1,676 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,600 parts In-Stock

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Corphita

USA . 675 parts In-Stock

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675

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Elevate your electrical projects with the top-quality BGX50A by Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers reliable Bridge Rectifier Diodes that are versatile and efficient. Whether you're working on power supplies, motor drives, or lighting systems, the BGX50A offers exceptional performance and durability. With its small outline package and quick reverse recovery time, this diode ensures seamless operation and optimal power management. Trust Infineon for superior quality and innovative solutions that elevate your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the diodes from external elements, making them suitable for various environments.

Config: BRIDGE, 4 ELEMENTS

The bridge configuration with 4 elements allows for full-wave rectification, ensuring efficient conversion of AC to DC.

Maximum Reverse Recovery Time: 0.006 us

Fast reverse recovery time improves efficiency and reduces power loss in the circuit.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to mount and install in various electronic devices or circuits.

No. of Terminals: 4

Having 4 terminals provides easy connectivity and versatility in circuit designs.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, these diodes can withstand harsh conditions and ensure reliable performance.

Maximum Power Dissipation: 0.21 W

Low power dissipation helps in reducing heat buildup and improving the overall efficiency of the circuit.

Minimum Breakdown Voltage: 50 V

A minimum breakdown voltage of 50 V ensures protection against voltage spikes and overloads.

Terminal Form: GULL WING

Gull wing terminal form allows for easy surface mount installation, saving space and making it suitable for compact designs.

Maximum Repetitive Peak Reverse Voltage: 50 V

This voltage rating ensures the diodes can handle high reverse voltages without damage, enhancing their reliability.

Technical Specifications

Bridge Rectifier Diodes BGX50A attributes and parameters. Explore more Bridge Rectifier Diodes devices from Infineon Technologies

Specs

Minimum Breakdown Voltage:

50 V

Case Connection:

CATHODE

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

2.6 V

JESD-30 Code:

R-PDSO-G4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.14 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.21 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Recovery Time:

.006 us

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

BGX50A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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