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BAS4005WE6327BTSA1

Infineon Technologies

BAS4005WE6327BTSA1 by Infineon Technologies

Infineon's BAS4005WE6327BTSA1 is a Schottky rectifier diode with common cathode, 2 elements. It has a max output current of 0.12A and power dissipation of 0.25W. Ideal for surface mount applications in electronics due to its small outline package style and silicon diode element material.

Median Price

$0.077

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 350 parts In-Stock

1+ parts

$0.077

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$0.070

1k+ parts

$0.063

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350

$0.077

$0.070

$0.063

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Distributors (In-Stock)

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Digiode

USA . 363 parts In-Stock

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$0.073

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$0.073

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VNN

France . 5,172 parts In-Stock

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Vyrian

USA . 2,567 parts In-Stock

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Nova Conductors

Japan . 47 parts In-Stock

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Corohmni

South Africa . 655 parts In-Stock

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$0.017

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655

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Corphita

USA . 149 parts In-Stock

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$0.069

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.077

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$0.070

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$0.063

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350

$0.077

$0.070

$0.063

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Modulus Dynamics

Lithuania . 29,553 parts In-Stock

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$0.108

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$0.104

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$0.099

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Aztec Data Supply Inc.

USA . 2,373 parts In-Stock

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$0.115

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Ampacity Inc.

Singapore . 307 parts In-Stock

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$0.142

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AZTECH Wire

Italy . 221 parts In-Stock

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Andel Nordic

Denmark . 3,692 parts In-Stock

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$17.510

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$12.260

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3,692

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$12.260

Component Stockers USA

USA . 714 parts In-Stock

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$99.990

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Microchip USA

USA . 5,882 parts In-Stock

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Continental Prestige Electronics

USA . 4,041 parts In-Stock

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Argo Parts USA

USA . 636 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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100

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Overview

Enhance your electronic projects with the BAS4005WE6327BTSA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon ensures top-notch quality and reliability in their diodes and rectifiers. This common cathode diode features two elements with a Schottky technology, offering a maximum output current of 0.12 A. With a small outline package style and gull wing terminal form, this diode is perfect for surface mount applications. Trust in Infineon to deliver high-performance components for your next project, providing value, efficiency, and innovation every step of the way.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diodes, ensuring a longer lifespan for the product.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for easier circuit design and integration, while the 2 elements provide redundancy.

Surface Mount: YES

Surface mount compatibility makes installation and assembly easier and more efficient.

Package Shape: RECTANGULAR

Rectangular shape allows for space-efficient placement on circuit boards.

No. of Terminals: 3

Having 3 terminals provides flexibility in connecting the diodes to the circuit.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for high-density circuit design.

Terminal Position: DUAL

Dual terminal position provides stability and ease of connection.

Maximum Power Dissipation: 0.25 W

High maximum power dissipation ensures the diodes can handle heavy loads without overheating.

Diode Type: RECTIFIER DIODE

Rectifier diodes are essential for converting alternating current (AC) to direct current (DC) in various electronic devices.

Maximum Output Current: 0.12 A

High maximum output current allows for efficient power delivery in electrical circuits.

Technology: SCHOTTKY

Schottky technology provides fast switching speed and low forward voltage drop, improving overall performance.

Terminal Form: GULL WING

Gull wing terminal form offers secure solder connections and easy placement on circuit boards.

No. of Elements: 2

Having 2 elements provides redundancy and backup in case one diode fails.

Diode Element Material: SILICON

Silicon is a common and reliable material for diode elements, ensuring good conductivity and stability.

Technical Specifications

Diodes & Rectifiers BAS4005WE6327BTSA1 attributes and parameters. Explore more Diodes & Rectifiers devices from Infineon Technologies

Specs

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-G3

No. of Elements:

2

No. of Terminals:

3

Maximum Output Current:

.12 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

.25 W

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

BAS4005WE6327BTSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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