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BAS40-04,235

NXP Semiconductors

BAS40-04,235 by NXP Semiconductors

BAS40-04,235 by NXP Semiconductors is a Schottky rectifier diode with a max forward voltage of 0.38V and output current of 0.12A. It features a series connected, center tap configuration with two elements in a small outline package suitable for surface mount applications. This diode has a max repetitive peak reverse voltage of 40V, making it ideal for various electronic circuits requiring low forward voltage drop and high switching speeds.

Median Price

$0.041

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Adafruit Industries

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DigiKey

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$0.070

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$0.044

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Mouser Electronics

USA . 563 parts In-Stock

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Future Electronics

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Chip1Stop

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EBV Elektronik

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Rochester

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Arrow

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Digiode

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Nova Conductors

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NAC Semi

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Chip Stock

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ComSIT Distribution GmbH

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Vyrian

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VNN

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Anansix

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J2 Sourcing AB

Sweden . 120 parts In-Stock

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Corphita

USA . 4,557 parts In-Stock

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Component Stockers USA

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Ampacity Inc.

Singapore . 132,431 parts In-Stock

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AZTECH Wire

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Netroflash

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Modulus Dynamics

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Microchip USA

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Perfect Parts

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Glotronic Ltd.

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QUARKTWIN TECHNOLOGY LTD

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GreenTree Electronics

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Lucentia Tech

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Speed Components Ltd (Excess)

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Overview

Elevate your electronic projects with the BAS40-04,235 diode by NXP Semiconductors. Known for their top-quality components, NXP's diodes offer superior performance and reliability. This series-connected, center tap diode is perfect for a wide range of applications, ensuring optimal efficiency and precision. With a maximum output current of 0.12 A and a maximum forward voltage of 0.38 V, this diode delivers exceptional value and benefits to customers looking for high-quality components for their designs. Trust NXP Semiconductors to provide you with the best diodes for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material makes the package durable and resistant to external factors, ensuring longevity and reliability.

Config: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Series connected configuration with center tap and 2 elements allows for efficient power conversion and distribution in various applications.

Surface Mount: YES

Surface mount capability makes installation and integration easier in modern electronic designs.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150°C ensures stable performance even under demanding conditions.

Maximum Forward Voltage (VF): 0.38 V

Low maximum forward voltage of 0.38V results in minimal power loss and high efficiency during operation.

Technology: SCHOTTKY

Schottky diode technology offers fast switching speeds and low forward voltage drop, suitable for high frequency applications.

Maximum Repetitive Peak Reverse Voltage: 40 V

High maximum repetitive peak reverse voltage rating of 40V provides protection against voltage spikes and reverse currents.

Maximum Non Repetitive Peak Forward Current: 0.2 A

Capability to handle up to 0.2A of non-repetitive peak forward current makes this product suitable for transient surge protection.

Technical Specifications

Diodes & Rectifiers BAS40-04,235 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.38 V

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

.2 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.12 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

40 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAS40-04,235 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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