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AUIRS2124STR

Infineon Technologies

AUIRS2124STR by Infineon Technologies

AUIRS2124STR by Infineon is a MOSFET gate driver with 20V max supply voltage, 15V power supplies, and 0.5A output peak current limit. Ideal for automotive applications due to its small outline package style and dual terminal position. Operates in temperatures ranging from -40°C to 125°C, making it suitable for various automotive electronic systems.

Median Price

$4.690

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,381 parts In-Stock

1+ parts

$4.690

100+ parts

$2.400

1k+ parts

$1.740

10k+ parts

$1.730

2,381

$4.690

$2.400

$1.740

$1.730

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 859 parts In-Stock

1+ parts

$3.097

100+ parts

-

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859

$3.097

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Cyclops Electronics Ltd

UK . 45,000 parts In-Stock

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45,000

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VNN

France . 30,313 parts In-Stock

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30,313

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Vyrian

USA . 2,075 parts In-Stock

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2,075

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Nova Conductors

Japan . 57 parts In-Stock

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57

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 660 parts In-Stock

1+ parts

$1.450

100+ parts

$1.392

1k+ parts

$1.334

10k+ parts

-

660

$1.450

$1.392

$1.334

-

Corohmni

South Africa . 182 parts In-Stock

1+ parts

$1.450

100+ parts

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182

$1.450

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Corphita

USA . 18 parts In-Stock

1+ parts

$2.934

100+ parts

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18

$2.934

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Semicontronic

India . 2,339 parts In-Stock

1+ parts

$3.830

100+ parts

$3.734

1k+ parts

$3.715

10k+ parts

-

2,339

$3.830

$3.734

$3.715

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Ampacity Inc.

Singapore . 2,288 parts In-Stock

1+ parts

$3.830

100+ parts

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2,288

$3.830

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Microchip USA

USA . 2,630 parts In-Stock

1+ parts

$9.819

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2,630

$9.819

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Aztec Data Supply Inc.

USA . 280 parts In-Stock

1+ parts

$10.340

100+ parts

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280

$10.340

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Advanced Electronics

New Zealand . 70 parts In-Stock

1+ parts

$11.433

100+ parts

$10.404

1k+ parts

$9.375

10k+ parts

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70

$11.433

$10.404

$9.375

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Lixinc

USA . 19,871 parts In-Stock

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19,871

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Continental Prestige Electronics

USA . 3,288 parts In-Stock

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3,288

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Bastille Electronics

Australia . 800 parts In-Stock

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800

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Argo Parts USA

USA . 337 parts In-Stock

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337

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Authorized Procurement Solutions

USA . 240 parts In-Stock

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240

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Perfect Parts

USA . 1 parts In-Stock

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1

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Overview

Revolutionize your projects with the AUIRS2124STR MOSFET Gate Driver by Infineon Technologies. Designed with precision and quality in mind, this small outline driver offers unparalleled performance in automotive applications. With a nominal output peak current limit of 0.5A and a turn-on/off time of 0.24us, this driver ensures efficient operation and optimal functionality. Trust in Infineon's expertise to deliver reliable solutions for your gate driving needs. Unlock the potential of your designs with the AUIRS2124STR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and protection for the MOSFET gate driver, making it suitable for a variety of applications.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation of the MOSFET gate driver on circuit boards, saving space and facilitating mass production.

Maximum Supply Voltage: 20 V

With a maximum supply voltage of 20 V, this MOSFET gate driver can handle a wide range of voltage inputs, providing flexibility in different operating conditions.

Package Shape: RECTANGULAR

The rectangular package shape offers ease of handling, integration, and mounting, which contributes to a more efficient and space-saving design.

Power Supplies (V): 15

Having a power supply of 15 V ensures reliable and stable operation of the MOSFET gate driver, meeting the power requirements of various systems.

No. of Terminals: 8

The 8 terminals provide multiple connection points for interfacing the MOSFET gate driver with other components, enabling versatile connectivity options.

Minimum Supply Voltage: 10 V

The minimum supply voltage requirement of 10 V ensures that the MOSFET gate driver can function properly within a specified voltage range, enhancing its reliability.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C allows the MOSFET gate driver to withstand elevated temperatures, making it suitable for demanding industrial and automotive environments.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40°C, this MOSFET gate driver can operate effectively in cold environments, ensuring consistent performance in various temperature conditions.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides corrosion resistance and good solderability, improving the reliability and longevity of the connections in the MOSFET gate driver.

Terminal Position: DUAL

Having dual terminal positions offers flexibility in wiring configurations and simplifies the installation process, enhancing the usability of the MOSFET gate driver.

Maximum Seated Height: 1.75 mm

The compact maximum seated height of 1.75 mm allows for a low-profile design, saving space and enabling easy integration of the MOSFET gate driver in compact electronic devices.

Width: 3.9 mm

The narrow width of 3.9 mm contributes to the compact and space-efficient design of the MOSFET gate driver, making it suitable for applications with limited board space.

High Side Driver: YES

Having a high-side driver capability allows the MOSFET gate driver to control high side power MOSFETs, enabling efficient and reliable high-side switching in various circuit designs.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures proper soldering and thermal stability during the manufacturing process, contributing to the reliability of the MOSFET gate driver.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C guarantees effective solder reflow processes for secure and durable solder joints, ensuring the long-term performance of the MOSFET gate driver.

Length: 4.89 mm

The compact length of 4.89 mm helps in reducing the overall footprint of the MOSFET gate driver, making it suitable for space-constrained applications.

Temperature Grade: AUTOMOTIVE

Being automotive-grade ensures that the MOSFET gate driver meets stringent quality and reliability standards for automotive applications, making it a trusted choice for automotive electronic systems.

Technology: CMOS

Utilizing CMOS technology offers low power consumption, high noise immunity, and fast switching speeds, making the MOSFET gate driver energy-efficient and reliable in high-performance applications.

Terminal Form: GULL WING

The gull wing terminal form provides excellent mechanical strength and reliability for the connections, ensuring stable and secure connections in the MOSFET gate driver.

Nominal Supply Voltage: 15 V

The nominal supply voltage of 15 V ensures compatibility with standard power supplies, making it easy to integrate the MOSFET gate driver into various electronic systems.

Turn-on Time: 0.24 us

The fast turn-on time of 0.24 microseconds enables quick switching of the MOSFETs, reducing switching losses and improving the efficiency of the overall circuit.

Terminal Pitch: 1.27 mm

The tight terminal pitch of 1.27 mm allows for compact and efficient wiring connections, enabling high-density board designs and minimizing signal distortion in the MOSFET gate driver.

Moisture Sensitivity Level (MSL): 3

Having a moisture sensitivity level of 3 indicates that the MOSFET gate driver is sensitive to moisture but can be safely soldered using standard industry practices, ensuring proper handling during manufacturing and assembly.

Nominal Output Peak Current Limit: 0.5 A

With a nominal output peak current limit of 0.5 A, this MOSFET gate driver can efficiently drive MOSFETs and control high current loads, making it suitable for power electronics applications.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

The buffer or inverter-based interface IC type allows the MOSFET gate driver to efficiently drive and control MOSFETs, ensuring precise and reliable switching operations in various electronic circuits.

Turn-off Time: 0.24 us

The fast turn-off time of 0.24 microseconds enables quick and efficient switching-off of the MOSFETs, reducing switching losses and improving the overall performance of the MOSFET gate driver.

Technical Specifications

MOSFET Gate Drivers AUIRS2124STR attributes and parameters. Explore more MOSFET Gate Drivers devices from Infineon Technologies

Specs

Driver No. of Bits:

1

High Side Driver:

YES

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.89 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

.5 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

15

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Peripheral Drivers

Maximum Supply Voltage:

20 V

Minimum Supply Voltage:

10 V

Nominal Supply Voltage:

15 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.24 us

Turn-on Time:

.24 us

Width:

3.9 mm

Trade Compliance

AUIRS2124STR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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