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1ED020I12-F2

Infineon Technologies

1ED020I12-F2 by Infineon Technologies

1ED020I12-F2 by Infineon Technologies is a MOSFET Gate Driver with 16 terminals, operating at -40 to 105 °C. It has a turn-on time of 0.195 us and nominal output peak current limit of 2 A. Ideal for industrial applications requiring high side drivers and interface IC type as half bridge based IGBT driver.

Median Price

$3.271

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 108 parts In-Stock

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$4.310

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$2.700

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$2.250

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108

$4.310

$2.700

$2.250

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RS (Exports)

UK . 1,120 parts In-Stock

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$2.232

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$2.232

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Digiode

USA . 56 parts In-Stock

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$4.218

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Maritex

Poland . 1,988 parts In-Stock

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$4.641

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ComSIT Distribution GmbH

Germany . 8,227 parts In-Stock

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Component Sense

UK . 3,333 parts In-Stock

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Vyrian

USA . 2,329 parts In-Stock

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Sensible Micro Corp

USA . 506 parts In-Stock

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VNN

France . 100 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 2,267 parts In-Stock

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$1.900

100+ parts

$1.852

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$1.843

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2,267

$1.900

$1.852

$1.843

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Ampacity Inc.

Singapore . 2,160 parts In-Stock

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$1.900

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$1.900

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Corphita

USA . 432 parts In-Stock

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$3.996

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432

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Corohmni

South Africa . 277 parts In-Stock

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$6.029

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277

$6.029

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Modulus Dynamics

Lithuania . 1,699 parts In-Stock

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$9.727

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$9.338

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$8.949

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1,699

$9.727

$9.338

$8.949

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GreenTree Electronics

Israel . 256,000 parts In-Stock

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S.R.D Solutions

India . 30,000 parts In-Stock

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Perfect Parts

USA . 20,368 parts In-Stock

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Lixinc

USA . 12,770 parts In-Stock

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Continental Prestige Electronics

USA . 5,811 parts In-Stock

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Kepictronics

USA . 5,500 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,500 parts In-Stock

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Advanced Electronics

New Zealand . 3,638 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Lucentia Tech

USA . 900 parts In-Stock

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Bastille Electronics

Australia . 110 parts In-Stock

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Argo Parts USA

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Overview

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and cost-effective, making the product a reliable choice for various applications.

Surface Mount: YES

The surface mount feature allows for easy and secure installation, saving time and effort during assembly.

Maximum Supply Voltage: 5.5 V

With a high maximum supply voltage, this gate driver can handle a wide range of power requirements, increasing versatility.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of space on a circuit board, ideal for compact designs.

Power Supplies (V): -8,5,15

The multiple power supply options provide flexibility in voltage configurations, accommodating different system requirements.

No. of Terminals: 16

The ample number of terminals allows for easy connections and integration with other components, simplifying the circuit design.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and enhances overall circuit layout, suitable for compact applications.

Minimum Supply Voltage: 4.5 V

The low minimum supply voltage ensures compatibility with a wide range of power sources, increasing adaptability.

Maximum Operating Temperature: 105 °C

The high maximum operating temperature range enables reliable performance in demanding environmental conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures the gate driver can function effectively even in extremely cold environments.

Maximum Seated Height: 2.64 mm

The low seated height profile allows for a compact design, ideal for applications with limited space restrictions.

Width: 7.52 mm

The moderate width size offers a good balance between space-saving and ease of handling during installation.

High Side Driver: YES

The high side driver capability enhances the gate driver's efficiency in managing power distribution and control in the circuit.

Length: 10.34 mm

The moderate length of the gate driver ensures compatibility with standard PCB layouts, making it easy to incorporate into existing designs.

Temperature Grade: INDUSTRIAL

The industrial-grade temperature rating ensures the gate driver can withstand harsh operational environments commonly found in industrial settings.

Nominal Supply Voltage: 5 V

The stable nominal supply voltage provides consistent power delivery, essential for the reliable operation of connected components.

Nominal Output Peak Current Limit: 2 A

The high output peak current limit ensures the gate driver can handle sudden surges in power demand, improving system stability.

Interface IC Type: HALF BRIDGE BASED IGBT DRIVER

The specific interface IC type tailored for half-bridge IGBT drivers ensures compatibility and optimized performance in relevant applications.

Turn-off Time: 0.19 us

The quick turn-off time enhances the gate driver's responsiveness and efficiency in controlling power flow within the circuit.

Technical Specifications

MOSFET Gate Drivers 1ED020I12-F2 attributes and parameters. Explore more MOSFET Gate Drivers devices from Infineon Technologies

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e3

Length:

10.34 mm

Moisture Sensitivity Level (MSL):

3

Nominal Negative Supply Voltage:

-8 V

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Power Supplies (V):

-8,5,15

Qualification:

Not Qualified

Maximum Seated Height:

2.64 mm

Sub-Category:

Peripheral Drivers

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

20 V

Minimum Supply Voltage-1:

13 V

Nominal Supply Voltage-1:

15 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Turn-off Time:

.19 us

Turn-on Time:

.195 us

Width:

7.52 mm

Trade Compliance

1ED020I12-F2 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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