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HM628128BLFP-75

Hitachi

HM628128BLFP-75 by Hitachi

Hitachi's HM628128BLFP-75 is a 128Kx8 SRAM with synchronous operation and 3-STATE output. It operates at 5V, has 32 terminals in a small outline package, and offers fast access time of 70ns. Ideal for applications requiring high-speed memory with low standby current consumption.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,623 parts In-Stock

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Nova Conductors

Japan . 77 parts In-Stock

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77

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,253 parts In-Stock

1+ parts

$4.280

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2,253

$4.280

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Corohmni

South Africa . 364 parts In-Stock

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$4.956

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364

$4.956

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AZTECH Wire

Italy . 636 parts In-Stock

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$17.253

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636

$17.253

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Argo Parts USA

USA . 4,874 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,835 parts In-Stock

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Continental Prestige Electronics

USA . 2,750 parts In-Stock

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2,750

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Enhance your electronic devices with the HM628128BLFP-75 by Hitachi, a premium quality SRAM memory module that guarantees superior performance and reliability. Hitachi, known for its top-notch manufacturing standards, delivers a product that is ideal for a wide range of applications in the electronics industry. With a compact design and synchronous operation, this memory module offers seamless integration and efficient data processing. Upgrade your systems with Hitachi's HM628128BLFP-75 and experience enhanced speed, power efficiency, and overall performance like never before. Elevate your technology game with this exceptional product from Hitachi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the SRAM, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy and convenient installation onto circuit boards, saving time and effort.

Operating Mode: SYNCHRONOUS

Enables synchronized data transfer, enhancing the overall performance and efficiency of the SRAM.

Nominal Supply Voltage / Vsup (V): 5

Optimal supply voltage ensures stable and consistent operation of the SRAM.

Memory Density: 1048576 bit

High memory density allows for storage of large amounts of data, making it suitable for various applications.

Maximum Access Time: 70 ns

Fast access time ensures quick retrieval of data, improving the speed and responsiveness of the SRAM.

Technical Specifications

SRAM HM628128BLFP-75 attributes and parameters. Explore more SRAM devices from Hitachi

Specs

Maximum Access Time:

70 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G32

JESD-609 Code:

e0

Length:

20.45 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP32,.56

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

3 mm

Maximum Standby Current:

.00005 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

70 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

11.3 mm

Trade Compliance

HM628128BLFP-75 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

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