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HAF1004(L)

Hitachi

HAF1004(L) by Hitachi

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 862 parts In-Stock

1+ parts

$63.079

100+ parts

-

1k+ parts

-

10k+ parts

$60.556

862

$63.079

-

-

$60.556

Northwest PG Solutions

USA . 1,872 parts In-Stock

1+ parts

$69.387

100+ parts

-

1k+ parts

-

10k+ parts

-

1,872

$69.387

-

-

-

Technical Specifications

Power Field Effect Transistors (FET) HAF1004(L) attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Hitachi

Specs

Additional Features:

BUILT-IN THE OVER TEMPERATURE SHUT-DOWN CIRCUIT

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

5 A

Maximum Drain-Source On Resistance:

.34 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

10 A

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

HAF1004(L) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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