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2SK1229

Hitachi

2SK1229 by Hitachi

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 4 V; Maximum Drain Current (ID): .06 A; No. of Terminals: 4;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 928 parts In-Stock

1+ parts

$0.677

100+ parts

-

1k+ parts

-

10k+ parts

-

928

$0.677

-

-

-

Northwest PG Solutions

USA . 1,557 parts In-Stock

1+ parts

$0.745

100+ parts

-

1k+ parts

-

10k+ parts

-

1,557

$0.745

-

-

-

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2SK1229 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Hitachi

Specs

Additional Features:

LOW NOISE

Configuration:

Minimum DS Breakdown Voltage:

4 V

Maximum Drain Current (Abs) (ID):

.06 A

Maximum Drain Current (ID):

.06 A

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY

Highest Frequency Band:

X BAND

JESD-30 Code:

O-CRDB-F4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

125 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

DISK BUTTON

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.16 W

Minimum Power Gain (Gp):

9 dB

Qualification:

Not Qualified

Sub-Category:

FET RF Small Signal

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM ARSENIDE

Trade Compliance

2SK1229 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

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