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IRFD323R

Harris Semiconductor

IRFD323R by Harris Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Transistor Element Material: SILICON; No. of Terminals: 3;

Median Price

-

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Suppliers In-Stock

0

In-Stock Inventory

< 1k

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Supply Digital

USA . 1,512 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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1,512

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Technical Specifications

Small Signal Field Effect Transistors (FET) IRFD323R attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Harris Semiconductor

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

350 V

Maximum Drain Current (Abs) (ID):

.4 A

Maximum Drain Current (ID):

.4 A

Maximum Drain-Source On Resistance:

2.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDIP-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRFD323R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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